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Fluorine plasma treatment of high-k gate stack for defect passivation

  • US 7,902,018 B2
  • Filed: 09/26/2007
  • Issued: 03/08/2011
  • Est. Priority Date: 09/26/2006
  • Status: Active Grant
First Claim
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1. A method for forming a semiconductor device, comprising:

  • introducing a substrate into a first processing chamber;

    forming a high-k dielectric layer having a desired thickness on a surface of the substrate in the first processing chamber;

    transferring the substrate to a second processing chamber without exposing the substrate to ambient;

    exposing the substrate to a low energy plasma comprising a fluorine source gas to form a fluorinated high-k dielectric layer on the substrate without etching the high-k dielectric layer in the second processing chamber;

    transferring the substrate to a third processing chamber without exposing the substrate to ambient; and

    forming a gate electrode on the substrate fluorinated high-k dielectric layer in the third processing chamber.

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