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Methods of forming field effect transistors, methods of forming field effect transistor gates, methods of forming integrated circuitry comprising a transistor gate array and circuitry peripheral to the gate array, and methods of forming integrated circuitry comprising a transistor gate array including first gates and second grounded isolation gates

  • US 7,902,028 B2
  • Filed: 03/16/2010
  • Issued: 03/08/2011
  • Est. Priority Date: 02/02/2006
  • Status: Active Grant
First Claim
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1. A method of forming integrated circuitry comprising a transistor gate array and circuitry peripheral to the gate array, comprising:

  • forming masking material over semiconductive material of a substrate;

    forming array circuitry trenches through the masking material and into the semiconductive material;

    depositing array gate material within the array circuitry trenches in the masking material and within the array circuitry trenches in the semiconductive material;

    after depositing the array gate material, forming peripheral circuitry trenches through the masking material; and

    depositing peripheral circuitry gate material within the peripheral circuitry trenches within the masking material.

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