Methods of forming field effect transistors, methods of forming field effect transistor gates, methods of forming integrated circuitry comprising a transistor gate array and circuitry peripheral to the gate array, and methods of forming integrated circuitry comprising a transistor gate array including first gates and second grounded isolation gates
First Claim
1. A method of forming integrated circuitry comprising a transistor gate array and circuitry peripheral to the gate array, comprising:
- forming masking material over semiconductive material of a substrate;
forming array circuitry trenches through the masking material and into the semiconductive material;
depositing array gate material within the array circuitry trenches in the masking material and within the array circuitry trenches in the semiconductive material;
after depositing the array gate material, forming peripheral circuitry trenches through the masking material; and
depositing peripheral circuitry gate material within the peripheral circuitry trenches within the masking material.
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Accused Products
Abstract
The invention includes methods of forming field effect transistors, methods of forming field effect transistor gates, methods of forming integrated circuitry comprising a transistor gate array and circuitry peripheral to the gate array, and methods of forming integrated circuitry comprising a transistor gate array including first gates and second grounded isolation gates. In one implementation, a method of forming a field effect transistor includes forming masking material over semiconductive material of a substrate. A trench is formed through the masking material and into the semiconductive material. Gate dielectric material is formed within the trench in the semiconductive material. Gate material is deposited within the trench in the masking material and within the trench in the semiconductive material over the gate dielectric material. Source/drain regions are formed. Other aspects and implementations are contemplated.
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Citations
42 Claims
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1. A method of forming integrated circuitry comprising a transistor gate array and circuitry peripheral to the gate array, comprising:
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forming masking material over semiconductive material of a substrate; forming array circuitry trenches through the masking material and into the semiconductive material; depositing array gate material within the array circuitry trenches in the masking material and within the array circuitry trenches in the semiconductive material; after depositing the array gate material, forming peripheral circuitry trenches through the masking material; and depositing peripheral circuitry gate material within the peripheral circuitry trenches within the masking material. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16)
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17. A method of forming integrated circuitry comprising a transistor gate array and circuitry peripheral to the gate array, comprising:
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forming masking material over semiconductive material of a substrate; forming array circuitry trenches through the masking material and into the semiconductive material; depositing array gate material within the array circuitry trenches in the masking material and within the array circuitry trenches in the semiconductive material; forming peripheral circuitry trenches through the array gate material and through the masking material; and depositing peripheral circuitry gate material within the peripheral circuitry trenches within the array gate material and within the masking material.
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18. A method of forming field effect transistor gates, comprising:
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forming masking material over semiconductive material of a substrate, the substrate comprising a trench isolation region; in a common masking step, forming a first trench through the masking material and into the semiconductive material and forming a second grounded isolation gate trench through the masking material over the trench isolation region; and in a common deposition step, depositing gate material within the first trench and second trench. - View Dependent Claims (19, 20, 21, 22, 23, 24, 25, 26)
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27. A method of forming integrated circuitry comprising a transistor gate array including first gates and second grounded isolation gates, comprising:
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forming masking material over semiconductive material of a substrate, the substrate comprising trench isolation regions; forming first trenches through the masking material and into the semiconductive material for the first gates; forming second grounded isolation gate trenches through the masking material to within the trench isolation regions for the second grounded isolation gates; and depositing gate material within the first and second trenches. - View Dependent Claims (28, 29, 30, 31, 32, 33, 34, 35, 36, 37, 38, 39, 40, 41)
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42. A method of forming integrated circuitry comprising a transistor gate array and circuitry peripheral to the gate array, comprising:
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forming masking material over semiconductive material of a substrate, the substrate comprising a trench isolation region; in a common masking step, forming array circuitry trenches through the masking material and into the semiconductive material and forming a grounded isolation gate trench through the masking material into the trench isolation region; in a common deposition step, depositing array gate material within the array circuitry trenches in the masking material, within the array circuitry trenches in the semiconductive material, and within the grounded isolation gate trench within the trench isolate region; after depositing the array gate material, forming peripheral circuitry trenches through the masking material; and depositing peripheral circuitry gate material within the peripheral circuitry trenches within the masking material.
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Specification