System and process for processing a plurality of semiconductor thin films which are crystallized using sequential lateral solidification techniques

• US 7,902,052 B2
• Filed: 01/14/2008
• Issued: 03/08/2011
• Est. Priority Date: 02/19/2003
• Status: Expired due to Fees

• Current Assignee: Trustees Of Columbia University In The City Of New York (Columbia University)
• Original Assignee: Trustees Of Columbia University In The City Of New York (Columbia University)
• Inventors: Im, James S.
• Primary Examiner(s): Sarkar; Asok K
• Application Number:
  US12/013,825
• Publication Number:
  US 20080124526A1
• Time in Patent Office: 1,149 Days
• Field of Search: 117/44, 117/904, 257/E21.134, 438/487, 438/795, 219/121.6
• US Class Current: 438/487
• CPC Class Codes: B23K 26/0622 by shaping pulses
• CPC Class Codes: B23K 26/064 by means of optical elements, e.g. lenses, mirrors or prisms
• CPC Class Codes: B23K 26/0648 comprising lenses
• CPC Class Codes: B23K 26/0665 by beam condensation on the workpiece, e.g. for focusing
• CPC Class Codes: B23K 26/067 Dividing the beam into multiple beams, e.g. multifocusing
• CPC Class Codes: B23K 26/0673 into independently operating sub-beams, e.g. beam multiplexing to provide laser beams for several stations
• CPC Class Codes: B23K 26/12 in a special atmosphere, e.g. in an enclosure
• CPC Class Codes: B23K 26/127 in an enclosure
• CPC Class Codes: B23K 26/128 Laser beam path enclosures
• CPC Class Codes: H01L 21/02532 Silicon, silicon germanium, germanium
• CPC Class Codes: H01L 21/02678 Beam shaping, e.g. using a mask
• CPC Class Codes: H01L 21/02683 Continuous wave laser beam
• CPC Class Codes: H01L 21/02686 Pulsed laser beam
• CPC Class Codes: H01L 21/02689 using particle beams
• CPC Class Codes: H01L 21/02691 Scanning of a beam
• CPC Class Codes: Y10S 117/904 Laser beam
• CPC Class Codes: Y10T 428/24802 Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.]

Abstract

A process and system are provided for processing at least one section of each of a plurality of semiconductor film samples. In these process and system, the irradiation beam source is controlled to emit successive irradiation beam pulses at a predetermined repetition rate. Using such emitted beam pulses, at least one section of one of the semiconductor film samples is irradiated using a first sequential lateral solidification (“SLS”) technique and/or a first uniform small grained material (“UGS”) techniques to process the such section(s) of the first sample. Upon the completion of the processing of this section of the first sample, the beam pulses are redirected to impinge at least one section of a second sample of the semiconductor film samples. Then, using the redirected beam pulses, such section(s) of the second sample are irradiated using a second SLS technique and/or a second UGS technique to process the at least one section of the second sample. The first and second techniques can be different from one another or substantially the same.

Claims

1. A method for processing thin film samples, comprising:

(a) controlling an irradiation beam source to emit beam pulses;

(b) using the beam pulses, processing at least one section of a first sample of the thin film samples to obtain at least one of a predetermined grain structure and a predetermined grain pattern therein;

(c) redirecting the beam pulses; and

(d) using the redirected beam pulses, processing at least one section of a second sample to obtain at least one of a predetermined grain structure and a predetermined grain pattern therein.

2. The process according to claim 1, wherein the first sample is provided on a first stage in a first chamber, and the second sample is provided on a second stage in a second chamber.

3. The process according to claim 2, wherein the second sample is loaded on the second stage after a third sample is unloaded from the second stage, where the unloading of the third sample and loading of the second sample is completed while the first sample is being irradiated by the beam pulses.

4. The process according to claim 3, wherein the first sample is unloaded from the first stage, thereafter a fourth sample is loaded on the same stage, where the unloading of the first sample and loading of the fourth sample is completed while the second sample is being irradiated by the beam pulses.

5. A system for processing thin film samples, comprising:

(a) a beam source generating irradiation beam pulses;

(b) processing means optically coupled to the beam source and receiving the generated beam pulses therefrom, for processing at least one section of a first sample of the film samples using at least one of a SLS and a UGS technique; and

(c) beam redirecting means optically coupled to the beam source and coupled to the processing means for redirecting at least one of the beam pulses for processing at least one section of a second sample of the thin film samples.

6. The system according to claim 5, wherein the system further comprises at least a first chamber and a second chamber wherein a first sample is provided on a stage in the first chamber and a second sample is provided on a stage in the second chamber, wherein the first sample chamber and the second sample chamber are coupled to the redirecting means and configured to receive the beam pulses at different times.

7. The system according to claim 6, wherein the system is operable to (a) process at least one section of the sample in the first chamber using at least one of a first SLS and a first UGS technique;

(b) redirect the beam pulses; and

(c) process at least one section of the sample in the second chamber using at least one of a second SLS and a second UGS technique.

8. The system according to claim 7, wherein the system is operable to effect an unloading of a third sample from the second stage then a loading of the second sample onto the second stage, while the first sample is being processed.