Adapted LED device with re-emitting semiconductor construction

• US 7,902,542 B2
• Filed: 05/30/2007
• Issued: 03/08/2011
• Est. Priority Date: 06/14/2006
• Status: Expired due to Fees

• Current Assignee: 3M Innovative Properties Company (3M Company)
• Original Assignee: 3M Innovative Properties Company (3M Company)
• Inventors: Haase, Michael A., Miller, Thomas J., Ouderkirk, Andrew J., Leatherdale, Catherine A.
• Primary Examiner(s): Nguyen; Dao H
• Assistant Examiner(s): NGUYEN, TRAM HOANG
• Application Number:
  US11/755,010
• Publication Number:
  US 20070290190A1
• Time in Patent Office: 1,378 Days
• Field of Search: 257/13, 257 79-103, 257/918, 257E51018-E51022, 257E33001-E33077, 257/E33.054, 257/E25.028, 257/E25.032, 257E29069-E29071, 257/E29.245, 257/E21.371, 257/E21.387, 257E21403-E21407, 257/E21.441, 257/E21.445, 257E21448-E21452, 257/9, 257/E21.086, 257E21097-E211, 257E21108-E21113, 257E21117-E21118, 257/E21.542, 257/E21.543, 257E21697-E21699, 438 22- 47, 438/69, 438/493, 438/503, 438/507, 438/956, 438/77, 438/84, 438 93- 95, 438/102, 438/104, 438/188, 438/189, 438/285, 438603-604, 438/606, 438930-933
• US Class Current: 257/13
• CPC Class Codes: G02F 1/133603 with LEDs
• CPC Class Codes: H01L 33/08 with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body H01L27/15 takes precedence
• CPC Class Codes: H01L 33/502 Wavelength conversion materials

Abstract

An article includes an LED that has an emitting surface. A reemitting semiconductor structure has an emitting surface and converts light emitted by the LED to light of a different wavelength. At least one of the emitting surfaces frustrates total internal reflection.

Claims

1. An article, comprising:

an LED having a first emitting surface;

a reemitting semiconductor structure converting light emitted by the LED to light of a different wavelength and having a second emitting surface, at least one of first and second emitting surfaces being adapted to frustrate total internal reflection;

wherein the reemitting semiconductor structure comprises a potential well; and

the LED comprises a III-V semiconductor and the reemitting semiconductor structure comprises a II-VI semiconductor.

2. The article of claim 1, wherein the at least one of first and second emitting surfaces is adapted by roughening the surface.

3. The article of claim 1, wherein the at least one of first and second emitting surfaces is adapted by being structured.

4. The article of claim 1, wherein the at least one of first and second emitting surfaces is adapted by being encapsulated with a shaped encapsulant.

5. The article of claim 1, wherein the LED is a UV or blue LED.

6. The article of claim 1, wherein the reemitting semiconductor structure converts light emitted by the LED to blue light.

7. The article of claim 1, wherein the reemitting semiconductor structure converts light emitted by the LED to yellow light.

8. The article of claim 1, wherein the reemitting semiconductor structure converts light emitted by the LED to green light.

9. The article of claim 1, wherein the reemitting semiconductor structure converts light emitted by the LED to orange light.

10. The article of claim 1, wherein the reemitting semiconductor structure converts light emitted by the LED to red light.