Semiconductor device and manufacturing method thereof
First Claim
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1. A semiconductor device comprising:
- a thin film transistor comprising a gate electrode formed over a substrate, an insulating film formed over the gate electrode, a semiconductor film formed over the insulating film, a source region and a drain region formed over the semiconductor film, a source electrode over the source region, and a drain electrode formed over the drain region;
a first gate wiring being contiguous to the gate electrode;
a second gate wiring along the first gate wiring;
a first source wiring being contiguous to the source electrode;
a second source wiring along the first source wiring;
a pixel electrode comprising a conductive material, formed over the thin film transistor, and connected to the drain electrode; and
a convex portion arranged in the region surrounded by the first gate wiring and the second gate wiring and the first source wiring and the second source wiring wherein a surface of the pixel electrode is uneven due to the existence of the convex portion,wherein the convex portion includes a layer which comprise a material same as the gate electrode, andwherein the gate electrode and the layer are provided on the substrate.
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Abstract
A means of forming unevenness for preventing specular reflection of a pixel electrode, without increasing the number of process steps, is provided. In a method of manufacturing a reflecting type liquid crystal display device, the formation of unevenness (having a radius of curvature r in a convex portion) in the surface of a pixel electrode is performed by the same photomask as that used for forming a channel etch type TFT, in which the convex portion is formed in order to provide unevenness to the surface of the pixel electrode and give light scattering characteristics.
324 Citations
13 Claims
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1. A semiconductor device comprising:
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a thin film transistor comprising a gate electrode formed over a substrate, an insulating film formed over the gate electrode, a semiconductor film formed over the insulating film, a source region and a drain region formed over the semiconductor film, a source electrode over the source region, and a drain electrode formed over the drain region; a first gate wiring being contiguous to the gate electrode; a second gate wiring along the first gate wiring; a first source wiring being contiguous to the source electrode; a second source wiring along the first source wiring; a pixel electrode comprising a conductive material, formed over the thin film transistor, and connected to the drain electrode; and a convex portion arranged in the region surrounded by the first gate wiring and the second gate wiring and the first source wiring and the second source wiring wherein a surface of the pixel electrode is uneven due to the existence of the convex portion, wherein the convex portion includes a layer which comprise a material same as the gate electrode, and wherein the gate electrode and the layer are provided on the substrate. - View Dependent Claims (2, 3, 4, 5)
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6. A display device comprising:
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a thin film transistor comprising a gate electrode formed over a substrate, a first insulating film formed over the gate electrode, a semiconductor film formed over the first insulating film, a source region and a drain region formed over the semiconductor film, a source electrode over the source region, and a drain electrode formed over the drain region; a first gate wiring being contiguous to the gate electrode; a second gate wiring along the first gate wiring; a first source wiring being contiguous to the source electrode; a second source wiring along the first source wiring; a pixel electrode comprising a conductive material, formed over the thin film transistor, and connected to the drain electrode; a convex portion arranged in the region surrounded by the first gate wiring and the second gate wiring and the first source wiring and the second source wiring wherein a surface of the pixel electrode is uneven due to the existence of the convex portion; a second insulating film comprising inorganic material and covering the thin film transistor; and an alignment film for orienting liquid crystal molecules formed over the second insulating film, wherein the alignment film is in contact with the surface of the pixel electrode being uneven due to the existence of the convex portion, and wherein the convex portion includes a layer which comprise a material same as the gate electrode. - View Dependent Claims (7, 8, 9, 10, 11)
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12. A display device comprising:
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a thin film transistor comprising a gate electrode formed over a substrate, a first insulating film formed over the gate electrode, a semiconductor film formed over the first insulating film, a source region and a drain region formed over the semiconductor film, a source electrode over the source region, and a drain electrode formed over the drain region; a pixel electrode formed over the substrate and electrically connected to the thin film transistor; and a convex portion located between the substrate and the pixel electrode wherein a surface of the pixel electrode is uneven due to the existence of the convex portion, a second insulating film comprising inorganic material and covering the thin film transistor; and an alignment film for orienting liquid crystal molecules formed over the second insulating film, wherein the alignment film is in contact with the surface of the pixel electrode being uneven due to the existence of the convex portion, and wherein the convex portion includes a layer which comprise a material same as the gate electrode. - View Dependent Claims (13)
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Specification