Semiconductor device and method for manufacturing same
First Claim
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1. A semiconductor device including an N-channel insulated gate field effect transistor, a P-channel insulated gate field effect transistor and an insulating layer, wherein:
- each gate electrode of the N-channel insulated gate field effect transistor and the P-channel insulated gate field effect transistor is buried in a gate electrode formation opening provided in the insulating layer,the gate electrode of the N-channel insulated gate field effect transistor is composed of a first conductive material,the gate electrode of the P-channel insulated gate field effect transistor is composed of a second conductive material different from the first conductive material, andinterconnect layers respectively cover a whole top surface of a respective one of the gate electrodes of the N-channel insulated gate field effect transistor and the P-channel insulated gate field effect transistor.
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Abstract
A semiconductor device including an N-channel insulated gate field effect transistor and a P-channel insulated gate field effect transistor, the device having: a first insulating layer and a second insulating layer; and gate electrode contact plugs. Each of the gate electrodes of the N-channel insulated gate field effect transistor and the P-channel insulated gate field effect transistor is buried in a gate electrode formation opening provided in the first insulating layer.
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Citations
8 Claims
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1. A semiconductor device including an N-channel insulated gate field effect transistor, a P-channel insulated gate field effect transistor and an insulating layer, wherein:
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each gate electrode of the N-channel insulated gate field effect transistor and the P-channel insulated gate field effect transistor is buried in a gate electrode formation opening provided in the insulating layer, the gate electrode of the N-channel insulated gate field effect transistor is composed of a first conductive material, the gate electrode of the P-channel insulated gate field effect transistor is composed of a second conductive material different from the first conductive material, and interconnect layers respectively cover a whole top surface of a respective one of the gate electrodes of the N-channel insulated gate field effect transistor and the P-channel insulated gate field effect transistor. - View Dependent Claims (2, 3, 4, 5)
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6. A method for manufacturing a semiconductor device including an N-channel insulated gate field effect transistor and a P-channel insulated gate field effect transistor, the method comprising the steps of:
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preparing a base that includes (a) channel forming regions and source/drain regions of the N-channel insulated gate field effect transistor and the P-channel insulated gate field effect transistor, (b) an insulating layer, (c) gate electrode formation openings in the insulating layer for the N-channel insulated gate field effect transistor and the P-channel insulated gate field effect transistor, and (d) a gate insulating film at least on bottoms of the gate electrode formation openings; forming a gate electrode composed of a first conductive material in the gate electrode formation opening for the N-channel insulated gate field effect transistor, and forming a gate electrode composed of a second conductive material different from the first conductive material in the gate electrode formation opening for the P-channel insulated gate field effect transistor; and forming interconnect layers that each cover a whole top surface of a respective one of the gate electrodes of the N-channel insulated gate field effect transistor and the P-channel insulated gate field effect transistor. - View Dependent Claims (7, 8)
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Specification