Light emitting apparatus

• US 7,902,740 B2
• Filed: 11/06/2007
• Issued: 03/08/2011
• Est. Priority Date: 03/19/2001
• Status: Expired due to Fees

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Yamazaki, Shunpei, Sakakura, Masayuki
• Primary Examiner(s): MACCHIAROLO, PETER J
• Application Number:
  US11/935,831
• Publication Number:
  US 20080079359A1
• Time in Patent Office: 1,218 Days
• Field of Search: 313/503, 313/504, 313/506
• US Class Current: 313/506
• CPC Class Codes: H01L 27/1214 comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
• CPC Class Codes: H01L 27/1259 Multistep manufacturing methods
• CPC Class Codes: H01L 29/42384 for thin film field effect transistors, e.g. characterised by the thickness or the shape of the insulator or the dimensions, the shape or the lay-out of the conductor
• CPC Class Codes: H01L 29/4908 for thin film semiconductor, e.g. gate of TFT
• CPC Class Codes: H10K 50/81 Anodes
• CPC Class Codes: H10K 50/844 Encapsulations
• CPC Class Codes: H10K 59/1201 Manufacture or treatment
• CPC Class Codes: H10K 59/122 Pixel-defining structures or layers, e.g. banks
• CPC Class Codes: H10K 59/8051 Anodes
• CPC Class Codes: H10K 59/873 Encapsulations

Abstract

A light-emitting apparatus of the present invention includes: a first electrode formed on an insulating surface; a first insulating layer covering an end portion of the first electrode and having a tapered edge; a second insulating layer formed on the first electrode and the first insulating layer and formed of one kind or a plurality of kinds selected from the group consisting of silicon oxide, silicon nitride, and silicon oxynitride; an organic compound layer formed on the second insulating layer; and a second electrode formed on the organic compound layer.

Claims

1. A light-emitting device comprising:

a first electrode formed on an insulating surface;

a first insulating layer directly covering an end portion of the first electrode and an end portion of a second electrode and comprising tapered edges, wherein the first electrode and the second electrode are co-planar electrodes;

a second insulating layer directly covering the co-planar electrodes and the first insulating layer;

an organic compound layer formed on the second insulating layer; and

a third electrode formed on the organic compound layer,

wherein the second insulating layer has a thickness that allows the co-planar electrodes and the organic compound layer to form a tunnel junction.

2. A light-emitting device according to claim 1, wherein the second insulating layer comprises at least one selected from the group consisting of silicon oxide, silicon nitride, and silicon oxynitride.

3. A light-emitting device according to claim 1, wherein the second insulating layer comprises carbon as a main component thereof.

4. A light-emitting device according to claim 1, wherein the insulating surface comprises at least one of silicon nitride and silicon oxynitride.

5. A light-emitting device according to claim 1, wherein the first insulating layer comprises at least one of polyimide and acrylic resin.

6. A light-emitting device according to claim 1, wherein the thickness of the second insulating layer is 1 nm to 10 nm.

7. A light-emitting device according to claim 1, wherein the insulating surface comprises at least one of polyimide resin and acrylic resin.

8. A light-emitting device according to claim 1, wherein the light-emitting device is incorporated in one selected from the group consisting of a computer, a digital camera, a video camera, and a mobile phone.

9. A light-emitting device comprising:

a first electrode formed on an insulating surface;

a first insulating layer directly covering an end portion of the first electrode and an end portion of a second electrode and comprising tapered edges, wherein the first electrode and the second electrode are co-planar electrodes;

a second insulating layer directly covering the co-planar electrodes and the first insulating layer;

an organic compound layer formed on the second insulating layer; and

a third electrode formed on the organic compound layer,

wherein the second insulating layer has a thickness that allows a tunnel current or a Fowler-Nordheim current to flow therethrough.

10. A light-emitting device according to claim 9, wherein the second insulating layer comprises at least one selected from the group consisting of silicon oxide, silicon nitride, and silicon oxynitride.

11. A light-emitting device according to claim 9, wherein the second insulating layer comprises carbon as a main component thereof.

12. A light-emitting device according to claim 9, wherein the insulating surface comprises at least one of silicon nitride and silicon oxynitride.

13. A light-emitting device according to claim 9, wherein the first insulating layer comprises at least one of polyimide and acrylic resin.

14. A light-emitting device according to claim 9, wherein the thickness of the second insulating layer is 1 nm to 10 nm.

15. A light-emitting device according to claim 9, wherein the insulating surface comprises at least one of polyimide resin and acrylic resin.

16. A light-emitting device according to claim 9 wherein the light-emitting device is incorporated in one selected from the group consisting of a computer, a digital camera, a video camera, and a mobile phone.

17. A light-emitting device comprising:

a thin film transistor comprising a source region and a drain region;

an interlayer insulating film over the source region and the drain region;

a drain electrode connected to the drain region through an opening formed in the interlayer insulating film;

a first electrode formed on the interlayer insulating film so as to be connected to the drain electrode;

a first insulating layer comprising an opening on the first electrode, directly covering an end portion of the first electrode and an end portion of a second electrode, and comprising tapered edges, wherein the first electrode and the second electrode are co-planar electrodes;

a second insulating layer directly covering the co-planar electrodes and the first insulating layer;

an organic compound layer formed on the second insulating layer; and

a third electrode formed on the organic compound layer,

wherein the second insulating layer has a thickness that allows the co-planar electrodes and the organic compound layer to form a tunnel junction.

18. A light-emitting device according to claim 17, wherein the second insulating layer comprises at least one selected from the group consisting of silicon oxide, silicon nitride, and silicon oxynitride.

19. A light-emitting device according to claim 17, wherein the second insulating layer comprises carbon as a main component thereof.

20. A light-emitting device according to claim 17, wherein the interlayer insulating film comprises at least one of silicon nitride and silicon oxynitride.

21. A light-emitting device according to claim 17, wherein the interlayer insulating film comprises a first layer comprising at least one of polyimide and acrylic resin and a second layer comprising at least one of silicon nitride, silicon oxynitride, carbon, and a densified film of the first layer.

22. A light-emitting device according to claim 17, wherein the first insulating layer comprises at least one of polyimide and acrylic resin.

23. A light-emitting device according to claim 17, wherein the thickness of the second insulating layer is 1 nm to 10 nm.

24. A light-emitting device according to claim 17, wherein the interlayer insulating film comprises at least one of polyimide resin and acrylic resin.

25. A light-emitting device according to claim 17, wherein the light-emitting device is incorporated in one selected from the group consisting of a computer, a digital camera, a video camera, and a mobile phone.

26. A light-emitting device comprising:

a thin film transistor comprising a source region and a drain region;

an interlayer insulating film over the source region and the drain region;

a drain electrode connected to the drain region through an opening formed in the interlayer insulating film;

a first electrode formed on the interlayer insulating film so as to be connected to the drain electrode;

a first insulating layer comprising an opening on the first electrode, directly covering an end portion of the first electrode and an end portion of a second electrode, and comprising tapered edges, wherein the first electrode and the second electrode are co-planar electrodes;

a second insulating layer directly covering the co-planar electrodes and the first insulating layer;

an organic compound layer formed on the second insulating layer; and

a third electrode formed on the organic compound layer,

wherein the second insulating layer has a thickness that allows a tunnel current or a Fowler-Nordheim current to flow therethrough.

27. A light-emitting device according to claim 26, wherein the second insulating layer comprises at least one selected from the group consisting of silicon oxide, silicon nitride, and silicon oxynitride.

28. A light-emitting device according to claim 26, wherein the second insulating layer comprises carbon as a main component thereof.

29. A light-emitting device according to claim 26, wherein the interlayer insulating film comprises at least one of silicon nitride and silicon oxynitride.

30. A light-emitting device according to claim 26, wherein the interlayer insulating film comprises a first layer comprising at least one of polyimide and acrylic resin and a second layer comprising at least one of silicon nitride, silicon oxynitride, carbon, and a densified film of the first layer.

31. A light-emitting device according to claim 26, wherein the first insulating layer comprises at least one of polyimide and acrylic resin.

32. A light-emitting device according to claim 26, wherein the thickness of the second insulating layer is 1 nm to 10 nm.

33. A light-emitting device according to claim 26, wherein the interlayer insulating film comprises at least one of polyimide resin and acrylic resin.

34. A light-emitting device according to claim 26, wherein the light-emitting device is incorporated in one selected from the group consisting of a computer, a digital camera, a video camera, and a mobile phone.