Resistance random access memory having common source line

• US 7,903,448 B2
• Filed: 12/26/2007
• Issued: 03/08/2011
• Est. Priority Date: 01/23/2007
• Status: Active Grant

• Current Assignee: Samsung Electronics Co. Ltd.
• Original Assignee: Samsung Electronics Co. Ltd.
• Inventors: Cho, Woo-Yeong, Oh, Hyung-Rok, Park, Joon-Min, Kang, Sang-Beom
• Primary Examiner(s): Ho; Hoai V
• Assistant Examiner(s): TRAN, ANTHAN
• Application Number:
  US11/964,142
• Publication Number:
  US 20080175036A1
• Time in Patent Office: 1,168 Days
• Field of Search: 365/148, 365/154
• US Class Current: 365/148
• CPC Class Codes: G11C 13/0007 comprising metal oxide memory material, e.g. perovskites
• CPC Class Codes: G11C 13/0069 Writing or programming circuits or methods
• CPC Class Codes: G11C 2013/0071 Write using write potential applied to access device gate
• CPC Class Codes: G11C 2013/009 Write using potential difference applied between cell electrodes
• CPC Class Codes: G11C 2213/31 Material having complex metal oxide, e.g. perovskite structure
• CPC Class Codes: G11C 2213/79 Array wherein the access device being a transistor

Abstract

A resistance random access memory (RRAM) having a source line shared structure and an associated data access method. The RRAM, in which a write operation of writing data of first state and second state to a selected memory cell is performed through first and second write paths having mutually opposite directions, includes word lines, bit lines, a memory cell array and a plurality of source lines. The memory cell array includes a plurality of memory cells each constructed of an access transistor coupled to a resistive memory device. The memory cells are disposed in a matrix of rows and columns and located at each intersection of a word line and a bit line. Each of the plurality of source lines is disposed between a pair of word lines and in the same direction as the word lines. A positive voltage is applied to a source line in a memory cell write operation. Through the source line shared structure, occupied chip area is reduced and, in a write operating mode, a bit line potential can be determined within a positive voltage level range.

Claims

1. A resistance random access memory (RRAM) in which a write operation writing data having a first state and a second state to a selected memory cell is performed through first and second write paths formed in mutually opposite directions, the memory comprising:

a plurality of word lines;

a plurality of bit lines;

a memory cell array having a plurality of memory cells which are disposed at the intersections of the word and bit lines to form a matrix of rows and columns and each have an access transistor and a resistive memory device, wherein the resistive memory device is formed of SrZrO3 disposed between a top electrode and a bottom electrode; and

a plurality of source lines each disposed between every two word lines and in the same direction as the word lines, and each connected to source terminals of corresponding access transistors having gate terminals connected to corresponding two word lines,

wherein when the first state and the second state write operations are performed respectively, a selected source line voltage and a selected word line voltage are maintained equally, and the selected source line voltage during the first state and the second state write operations is a positive voltage.

2. The memory of claim 1, wherein each of the plurality of source lines is shared by every cell block including a predetermined number of memory cells.

3. The memory of claim 1, wherein the data having the first state and the second state is written to a selected one of the memory cells by changing a resistance value associated with a resistive memory device of the selected memory cell by current flowing through the top and bottom electrodes of the selected resistive memory device.

4. The memory of claim 1, wherein the first write path is associated with writing the data having the first state, and the second write path is associated with writing the data having the second state.

5. The memory of claim 4, wherein the first write path operates as a path of performing a program operation and the second write path operates as a path of performing an erase operation such that in the program and the erase operations, a positive voltage and a ground voltage are individually applied to a selected bit line of the bit lines without an applied negative voltage.

6. The memory of claim 1, wherein a potential of a selected bit line of the plurality of bit lines is a positive voltage.

7. The memory of claim 1, wherein in a read operating mode of the resistance random access memory, a drive voltage is applied to a selected one of the plurality of word lines, a ground voltage is applied to the selected source line and a clamping voltage is applied to a selected one of the plurality of the bit lines.

8. A resistance random access memory (RRAM) in which a write operation writing data having a first state and a second state to a selected memory cell is performed through first and second write paths formed in mutually opposite directions, the memory comprising:

a plurality of word lines;

a plurality of bit lines;

a memory cell array having a plurality of memory cells which are disposed at the intersections of the word and bit lines to form a matrix of rows and columns and each have an access transistor and a resistive memory device, wherein the resistive memory device is formed of a thin film of polycrystal material PrCaMnO3 disposed between a top electrode and a bottom electrode; and

a plurality of source lines each disposed between every two word lines and in the same direction as the word lines, and each connected to source terminals of corresponding access transistors having gate terminals connected to corresponding two word lines,

wherein when the first state and the second state write operations are performed respectively, a selected source line voltage and a selected word line voltage are maintained equally, and the selected source line voltage during the first state and the second state write operations is a positive voltage.

9. The memory of claim 8, wherein the data having the first state and the second state is written to a selected one of the memory cells by changing a resistance value associated with a resistive memory device of the selected memory cell by current flowing through the top and bottom electrodes of the selected resistive memory device.