PECVD methods for producing ultra low-k dielectric films using UV treatment
First Claim
1. A method of preparing a low-k doped silicon oxide (CDO) film on a substrate, the method comprising:
- providing the substrate to a deposition chamber;
contacting the substrate with a process gas comprising a silicon-containing precursor having a carbon-carbon triple bond and a carrier gas to thereby deposit a solid CDO film containing carbon-carbon triple bonds on the substrate via a dual RF frequency PECVD reaction, wherein the process gas contains no more than one hydrocarbon-containing precursor; and
exposing the deposited film to UV radiation in a manner that improves cross-linking and lowers the dielectric constant of the film.
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Abstract
Methods of preparing low-k carbon-doped oxide (CDO) films having high mechanical strength are provided. The methods involve contacting the substrate with a CDO precursor to deposit the film typically using a plasma-enhanced chemical vapor deposition (PECVD) method. After the film is deposited, it is exposed to ultraviolet radiation in a manner that increases cross-linking and/or lowers the dielectric constant of the film. The resulting films have ultra-low dielectric constants, e.g., about 2.5, but also high mechanical strength, e.g., a modulus of at least about 7.5 GPa. In certain embodiments, a single hydrocarbon precursor is used, resulting in an improved process for obtaining ULK films that does not require dual (porogen and backbone) precursors.
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Citations
23 Claims
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1. A method of preparing a low-k doped silicon oxide (CDO) film on a substrate, the method comprising:
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providing the substrate to a deposition chamber; contacting the substrate with a process gas comprising a silicon-containing precursor having a carbon-carbon triple bond and a carrier gas to thereby deposit a solid CDO film containing carbon-carbon triple bonds on the substrate via a dual RF frequency PECVD reaction, wherein the process gas contains no more than one hydrocarbon-containing precursor; and exposing the deposited film to UV radiation in a manner that improves cross-linking and lowers the dielectric constant of the film. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14)
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15. A method of preparing a low-k doped silicon oxide (CDO) film on a substrate, the method comprising:
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providing the substrate to a deposition chamber; contacting the substrate with a process gas comprising a silicon-containing precursor having a carbon-carbon triple bond and a carrier gas to thereby deposit a CDO film containing carbon-carbon triple bonds on the substrate via a dual RF frequency PECVD reaction; and exposing the deposited film to UV radiation to thereby lower the dielectric constant to no more than about 2.7 and increase a Young'"'"'s modulus of the film. - View Dependent Claims (16, 17, 18, 19, 20, 21, 22, 23)
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Specification