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Semiconductor device and method of forming holes in substrate to interconnect top shield and ground shield

  • US 7,906,371 B2
  • Filed: 05/28/2008
  • Issued: 03/15/2011
  • Est. Priority Date: 05/28/2008
  • Status: Active Grant
First Claim
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1. A method of making a shielded semiconductor device, comprising:

  • providing a multi-layer substrate;

    disposing a ground shield between layers of the substrate, the ground shield being electrically connected to a ground point;

    mounting a plurality of semiconductor die to the substrate over the ground shield, the ground shield extending beyond a footprint of the plurality of semiconductors die;

    forming an encapsulant over the semiconductor die and substrate;

    dicing the encapsulant to form dicing channels between the semiconductor die;

    forming a plurality of openings in the substrate along the dicing channels through the ground shield which extends under dicing channels;

    forming a top shield over the semiconductor die;

    filling the openings in the substrate with shielding material to electrically and mechanically connect the top shield to the ground shield.

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