Semiconductor device and method of forming holes in substrate to interconnect top shield and ground shield
First Claim
1. A method of making a shielded semiconductor device, comprising:
- providing a multi-layer substrate;
disposing a ground shield between layers of the substrate, the ground shield being electrically connected to a ground point;
mounting a plurality of semiconductor die to the substrate over the ground shield, the ground shield extending beyond a footprint of the plurality of semiconductors die;
forming an encapsulant over the semiconductor die and substrate;
dicing the encapsulant to form dicing channels between the semiconductor die;
forming a plurality of openings in the substrate along the dicing channels through the ground shield which extends under dicing channels;
forming a top shield over the semiconductor die;
filling the openings in the substrate with shielding material to electrically and mechanically connect the top shield to the ground shield.
7 Assignments
0 Petitions
Accused Products
Abstract
A shielded semiconductor device is made by embedding a ground shield between layers of a substrate. Semiconductor die are mounted to the substrate over the ground shields. An encapsulant is formed over the semiconductor die and substrate. The encapsulant is diced to form dicing channels between the semiconductor die. A plurality of openings is drilled into the substrate along the dicing channels down through the ground shield on each side of the semiconductor die. A top shield is formed over the semiconductor die. The openings in the substrate are filled with a shielding material to electrically and mechanically connect the top shield to the ground shield. The substrate is singulated to separate the semiconductor die with top shield and ground shield into individual semiconductor devices. IPDs in the semiconductor die generate electromagnetic interference which is blocked by the respective top shield and ground shield.
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Citations
24 Claims
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1. A method of making a shielded semiconductor device, comprising:
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providing a multi-layer substrate; disposing a ground shield between layers of the substrate, the ground shield being electrically connected to a ground point; mounting a plurality of semiconductor die to the substrate over the ground shield, the ground shield extending beyond a footprint of the plurality of semiconductors die; forming an encapsulant over the semiconductor die and substrate; dicing the encapsulant to form dicing channels between the semiconductor die; forming a plurality of openings in the substrate along the dicing channels through the ground shield which extends under dicing channels; forming a top shield over the semiconductor die; filling the openings in the substrate with shielding material to electrically and mechanically connect the top shield to the ground shield. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A method of making a shielded semiconductor device, comprising:
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providing a substrate; embedding a ground shield within the substrate; mounting a semiconductor die to the substrate over the ground shield, the ground shield extending beyond a footprint of the semiconductor die; forming an encapsulant over the semiconductor die and substrate; forming dicing channels around the semiconductor die; forming a plurality of openings in the substrate along the dicing channels through the ground shield which extends under the dicing channels; forming a top shield over the semiconductor die; and filling the openings in the substrate with conductive material to electrically and mechanically connect the top shield to the ground shield. - View Dependent Claims (9, 10, 11, 12, 13)
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14. A method of making a shielded semiconductor device, comprising:
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providing a substrate; embedding a ground shield within the substrate; mounting a semiconductor die to the substrate over the ground shield; forming a plurality of openings in the substrate through the ground shield; forming a top shield over the semiconductor die; and filling the openings in the substrate with conductive material to electrically and mechanically connect the top shield to the ground shield. - View Dependent Claims (15, 16, 17, 18, 19)
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20. A method of making a shielded semiconductor device, comprising:
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providing a substrate; embedding a ground shield within the substrate; mounting a semiconductor die to the substrate over the ground shield; forming an encapsulated over the semiconductor die and substrate; forming dicing channels around the semiconductor die; forming a plurality of openings in the substrate along the dicing channels through the ground shield; forming a top shield over the semiconductor die; and filling the openings in the substrate with conductive material to electrically and mechanically connect the top shield to the ground shield. - View Dependent Claims (21, 22, 23, 24)
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Specification