Nitride micro light emitting diode with high brightness and method for manufacturing the same
First Claim
1. A nitride micro LED with high brightness which is mounted through a flip-chip method, comprising:
- a sapphire substrate;
a plurality of micro-sized luminous pillars having an n-type GaN layer grown on the sapphire substrate, an active layer formed on the n-type GaN layer, and a p-type GaN layer formed on the active layer;
a gap filling material filled between the luminous pillars to have substantially the same height as the luminous pillars, wherein the gap filling material includes at least one selected from SiO2, Si3N4, or a combination thereof, polyamide, and ZrO2/SiO2 or HfO2/SiO2, and wherein the gap filling material is formed to have substantially the same height as the luminous pillars through a CMP (Chemical Mechanical Polishing) process;
a metal electrode formed on a top surface of the gap filling material and the luminous pillars;
a p-type electrode formed on the metal electrode; and
an n-type electrode electrically connected to the n-type GaN layer,wherein an array of the luminous pillars is driven at the same time, andwherein a top surface of the p-type GaN layer of the luminous pillars has convex surfaces formed through the CMP process.
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Abstract
The present invention relates to a nitride micro light emitting diode (LED) with high brightness and a method of manufacturing the same. The present invention provides a nitride micro LED with high brightness and a method of manufacturing the same, wherein a plurality of micro-sized luminous pillars 10 are formed in a substrates, a gap filling material such as SiO2, Si3N4, DBR(ZrO2/SiO2HfO2/SiO2), polyamide or the like is filled in gaps between the micro-sized luminous pillars, a top surface 11 of the luminous pillar array and the gap filling material is planarized through a CMP processing, and then a transparent electrode 6 having a large area is formed thereon, so that all the luminous pillars can be driven at the same time. In addition, the present invention provides a nitride micro LED with high brightness in which uniformity in formation of electrodes on the micro-sized luminous pillars array is enhanced by employing a flip-chip structure.
189 Citations
1 Claim
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1. A nitride micro LED with high brightness which is mounted through a flip-chip method, comprising:
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a sapphire substrate; a plurality of micro-sized luminous pillars having an n-type GaN layer grown on the sapphire substrate, an active layer formed on the n-type GaN layer, and a p-type GaN layer formed on the active layer; a gap filling material filled between the luminous pillars to have substantially the same height as the luminous pillars, wherein the gap filling material includes at least one selected from SiO2, Si3N4, or a combination thereof, polyamide, and ZrO2/SiO2 or HfO2/SiO2, and wherein the gap filling material is formed to have substantially the same height as the luminous pillars through a CMP (Chemical Mechanical Polishing) process; a metal electrode formed on a top surface of the gap filling material and the luminous pillars; a p-type electrode formed on the metal electrode; and an n-type electrode electrically connected to the n-type GaN layer, wherein an array of the luminous pillars is driven at the same time, and wherein a top surface of the p-type GaN layer of the luminous pillars has convex surfaces formed through the CMP process.
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Specification
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- Resources
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Current AssigneeSang-Kyu Kang
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Original AssigneeSang-Kyu Kang
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InventorsKang, Sang-Kyu
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Primary Examiner(s)Lee; Eugene
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Assistant Examiner(s)Ho; Anthony
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Application NumberUS12/545,795Publication NumberTime in Patent Office571 DaysField of Search257/85, 257/90, 257/96, 257/E33.012, 257/E33.023, 257/E33.025, 257/E33.027US Class Current257/85CPC Class CodesH01L 33/08 with a plurality of light e...H01L 33/32 containing nitrogenH01L 33/42 Transparent materialsH01L 33/44 characterised by the coatin...
