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Silicon integrated angular rate sensor

  • US 7,908,922 B2
  • Filed: 01/24/2008
  • Issued: 03/22/2011
  • Est. Priority Date: 01/24/2008
  • Status: Active Grant
First Claim
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1. A motion sensor comprising:

  • a support substrate formed of silicon having a crystalline orientation that defines a plane, defines a X-axis parallel to the plane, and defines a Y-axis perpendicular to the X-axis and parallel to the plane;

    a silicon sensing ring formed within and supported by the substrate and having a flexural resonance;

    at least one drive electrode comprising drive capacitive plates for applying electrostatic force on the ring to cause the ring to resonate;

    at least one sense electrode comprising sense capacitive plates for sensing a change in capacitance indicative of vibration nodes of resonance of the ring so as to sense motion;

    a plurality of silicon support springs connecting the substrate to the ring, wherein the support springs are formed as eight minor image pairs of springs, wherein the support springs each comprise a first spring connecting the substrate to the ring and a second spring connecting the substrate to the ring that is a minor image of the first spring, wherein each first spring and second spring comprise a first straight beam having a radial orientation relative to the sensing ring and the crystalline orientation of the silicon, and a second straight beam oriented at an angle relative to the first straight beam to substantially match a modulus of elasticity of the silicon support springs; and

    an electrical connection comprising at least one external tether in contact with the ring.

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