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Method of controlling a chamber based upon predetermined concurrent behavior of selected plasma parameters as a function of source power, bias power and chamber pressure

  • US 7,910,013 B2
  • Filed: 12/11/2006
  • Issued: 03/22/2011
  • Est. Priority Date: 05/16/2003
  • Status: Expired due to Fees
First Claim
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1. A method of processing a workpiece on workpiece support pedestal in a plasma reactor chamber in accordance with user-selected values of plural plasma parameters of a group comprising ion density, wafer voltage, etch rate, wafer current, by controlling chamber parameters of source power, bias power and chamber pressure, said method comprising:

  • a. for each one of said plural plasma parameters, fetching from a memory a relevant surface of constant value corresponding to the user-selected value of said one plasma parameter, said surface being defined in a 3-dimensional space of which each of said chamber parameters is a dimension, and determining an intersection of the relevant surfaces, said intersection corresponding to a target value of source power, bias power and chamber pressure; and

    b. setting said source power, bias power and the pressure in said chamber, respectively, to the target value.

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