Method of controlling a chamber based upon predetermined concurrent behavior of selected plasma parameters as a function of source power, bias power and chamber pressure
First Claim
1. A method of processing a workpiece on workpiece support pedestal in a plasma reactor chamber in accordance with user-selected values of plural plasma parameters of a group comprising ion density, wafer voltage, etch rate, wafer current, by controlling chamber parameters of source power, bias power and chamber pressure, said method comprising:
- a. for each one of said plural plasma parameters, fetching from a memory a relevant surface of constant value corresponding to the user-selected value of said one plasma parameter, said surface being defined in a 3-dimensional space of which each of said chamber parameters is a dimension, and determining an intersection of the relevant surfaces, said intersection corresponding to a target value of source power, bias power and chamber pressure; and
b. setting said source power, bias power and the pressure in said chamber, respectively, to the target value.
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Abstract
For each one of plural plasma parameters, such as ion density, wafer voltage, etch rate, wafer current, a relevant surface of constant value is fetched from a memory. The relevant surface of constant value corresponds to a user-selected value of one of the plasma parameters, the surface being defined in a space of which each one of plural, chamber parameters (e.g., source power, bias power and chamber pressure) is a dimension. An intersection of these relevant surfaces is found, the intersection corresponding to a target value of source power, bias power and chamber pressure. The source power, the bias power and the chamber pressure, respectively, are set to their corresponding target values.
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Citations
19 Claims
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1. A method of processing a workpiece on workpiece support pedestal in a plasma reactor chamber in accordance with user-selected values of plural plasma parameters of a group comprising ion density, wafer voltage, etch rate, wafer current, by controlling chamber parameters of source power, bias power and chamber pressure, said method comprising:
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a. for each one of said plural plasma parameters, fetching from a memory a relevant surface of constant value corresponding to the user-selected value of said one plasma parameter, said surface being defined in a 3-dimensional space of which each of said chamber parameters is a dimension, and determining an intersection of the relevant surfaces, said intersection corresponding to a target value of source power, bias power and chamber pressure; and b. setting said source power, bias power and the pressure in said chamber, respectively, to the target value. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13)
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14. A method of processing a workpiece on workpiece support pedestal in a plasma reactor chamber in accordance with user-selected values of plural plasma parameters of a group comprising ion density, wafer voltage, etch rate, wafer current, by controlling chamber parameters of source power, bias power and chamber pressure, the number of said plural plasma parameters being less than the number of said chamber parameters, said method comprising:
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a. for each one of said plural plasma parameters, fetching a relevant surface of constant value corresponding to the user-selected value of said one plasma parameter, and determining an intersection of the relevant surfaces which defines a line in a 3-dimensional space whose dimensions are source power, bias power and chamber pressure; and b. varying said source power, bias power and the pressure in said chamber, respectively, along said line. - View Dependent Claims (15, 16, 17, 18, 19)
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Specification