Method for manufacturing high temperature superconducting conductor

• US 7,910,155 B2
• Filed: 01/06/2006
• Issued: 03/22/2011
• Est. Priority Date: 04/08/2004
• Status: Active Grant

• Current Assignee: Superpower, Inc. (Furukawa Electric Company Limited)
• Original Assignee: Superpower, Inc. (Furukawa Electric Company Limited)
• Inventors: Lee, Hee-Gyoun, Selvamanickam, Venkat
• Primary Examiner(s): Talbot; Brian K
• Application Number:
  US11/326,895
• Publication Number:
  US 20100009064A1
• Time in Patent Office: 1,901 Days
• Field of Search: 427/62, 295/99, 204/192.24, 505/310, 505/434, 505/447, 505/473, 505/726
• US Class Current: 427/62
• CPC Class Codes: C23C 16/408 of copper or solid solutions thereof
• CPC Class Codes: C23C 16/4481 by evaporation using carrier gas in contact with the source material C23C16/4486 takes precedence
• CPC Class Codes: C23C 16/4557 Heated nozzles
• CPC Class Codes: C23C 16/45572 Cooled nozzles
• CPC Class Codes: C23C 16/545 for coating elongated substrates
• CPC Class Codes: H10N 60/0464 by metalloorganic chemical vapour deposition [MOCVD]
• CPC Class Codes: Y10S 505/726 Measuring or testing of superconducting property
• CPC Class Codes: Y10T 29/49014 Superconductor

Abstract

A method for manufacturing a high-temperature superconducting conductor includes translating an elongated substrate through a reactor. Further, a high temperature superconducting layer is formed on the substrate translating through the reactor by deposition of a reaction product of metalorganic precursor materials onto the substrate. Further, partial pressure of oxygen is monitored to indirectly monitor supply of metalorganic precursors into the reactor.

Claims

1. A method for manufacturing a high temperature superconducting conductor, comprising:

translating an elongate substrate through a reactor;

forming a reaction product by reacting metalorganic precursor materials within the reactor;

forming a high temperature superconducting layer on the substrate translating through the reactor, by depositing the reaction product onto the substrate;

monitoring oxygen partial pressure in the reactor to monitor formation of the reaction product and to monitor supply of the metalorganic precursor materials into the reactor during forming; and

controlling the supply of metalorganic precursor materials based on monitoring oxygen partial pressure.

2. The method of claim 1, further comprising controlling stability of the supply of the metalorganic precursor materials into the reactor.

3. The method of claim 1, wherein the precursor materials comprise vaporized species.

4. The method of claim 1, wherein supply of the precursor materials is controlled for at least about 20 hours.

5. The method of claim 3, wherein the step of forming is carried out by metalorganic chemical vapor deposition (MOCVD), in which the precursors react to form the reaction product.

6. The method of claim 1, wherein the high temperature superconductor layer has a Jc greater than about 1 MA/cm².

7. The method of claim 6, wherein the high temperature superconductor layer has a Jc greater than about 2 MA/cm².

8. The method of claim 1, wherein the high temperature superconductor layer has a current capacity of at least 150 A/cm width.

9. The method of claim 1, wherein the elongate substrate has a bi-axial texture, on which the high temperature superconducting layer is formed.

10. The method of claim 9, wherein the elongate substrate includes a buffer layer, the buffer layer having said bi-axial texture.

11. The method of claim 9, wherein the bi-axial texture comprises a cubic texture.