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Mask material conversion

  • US 7,910,288 B2
  • Filed: 09/01/2004
  • Issued: 03/22/2011
  • Est. Priority Date: 09/01/2004
  • Status: Active Grant
First Claim
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1. A method for semiconductor processing, comprising:

  • forming a plurality of spacers on a substrate by pitch multiplication, the spacers formed of a spacer material, wherein forming the plurality of spacers comprises;

    providing a plurality of spaced-apart mandrels;

    depositing a blanket layer of the spacer material on the mandrels;

    anisotropically etching the spacer material to define the spacers; and

    preferentially removing the mandrels;

    expanding a volume of the spacer material forming the spacers by converting the spacer material to a material occupying a larger volume than the spacer material;

    forming a photodefinable layer extending over the spacers; and

    patterning the photodefinable layer.

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