Bi-directional transistor with by-pass path and method therefor
First Claim
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1. A method of forming a bi-directional transistor comprising:
- providing a semiconductor substrate of a first conductivity type;
forming a first doped region of a second conductivity type on a surface of the semiconductor substrate as a body region of a first transistor;
forming a second doped region of the first conductivity type within the first doped region and extending a first distance into the first doped region as a first current carrying electrode region of the first transistor;
forming a third doped region of the first conductivity type extending from the second doped region a second distance into the first doped region;
forming a fourth doped region of the second conductivity type on the surface of the semiconductor substrate; and
forming a second transistor in the fourth doped region and coupling the second transistor in a parallel path with the first transistor; and
forming a third transistor of the bi-directional transistor wherein the third transistor is configured to selectively couple the body region of the first transistor to the semiconductor substrate.
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Abstract
In one embodiment, a transistor is formed to have a first current flow path to selectively conduct current in both directions through the transistor and to have a second current flow path to selectively conduct current in one direction.
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Citations
6 Claims
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1. A method of forming a bi-directional transistor comprising:
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providing a semiconductor substrate of a first conductivity type; forming a first doped region of a second conductivity type on a surface of the semiconductor substrate as a body region of a first transistor; forming a second doped region of the first conductivity type within the first doped region and extending a first distance into the first doped region as a first current carrying electrode region of the first transistor; forming a third doped region of the first conductivity type extending from the second doped region a second distance into the first doped region; forming a fourth doped region of the second conductivity type on the surface of the semiconductor substrate; and forming a second transistor in the fourth doped region and coupling the second transistor in a parallel path with the first transistor; and forming a third transistor of the bi-directional transistor wherein the third transistor is configured to selectively couple the body region of the first transistor to the semiconductor substrate.
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2. A method of forming a bi-directional transistor comprising:
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providing a semiconductor substrate of a first conductivity type; forming a first doped region of a second conductivity type on a surface of the semiconductor substrate as a body region of a first transistor; forming a second doped region of the first conductivity type within the first doped region and extending a first distance into the first doped region as a first current carrying electrode region of the first transistor; forming a third doped region of the first conductivity type extending from the second doped region a second distance into the first doped region; forming a fourth doped region of the second conductivity type on the surface of the semiconductor substrate; forming a second transistor in the fourth doped region and coupling the second transistor in parallel path with the first transistor; forming a fifth doped region of the second conductivity type on the surface of the semiconductor substrate and spaced apart from the first doped region; forming a source and a drain of a third transistor in the fifth doped region; and coupling the third transistor electrically between the first doped region and the semiconductor substrate. - View Dependent Claims (3)
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4. A method of forming a bi-directional transistor comprising:
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providing a semiconductor substrate of a first conductivity type; forming a first doped region of a second conductivity type on a surface of the semiconductor substrate as a body region of a first transistor; forming a second doped region of the first conductivity type within the first doped region and extending a first distance into the first doped region as a first current carrying electrode region of the first transistor; forming a third doped region of the first conductivity type extending from the second doped region a second distance into the first doped region; forming a fourth doped region of the second conductivity type on the surface of the semiconductor substrate; and forming a second transistor in the fourth doped region and coupling the second transistor in parallel path with the first transistor; forming a fifth doped region of the second conductivity type on the surface of the semiconductor substrate and spaced apart from the first doped region; forming a source and a drain of a third transistor in the fifth doped region; and coupling the third transistor electrically between the first doped region and the second doped region. - View Dependent Claims (5, 6)
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Specification