Non-volatile semiconductor storage device and method of manufacturing the same

• US 7,910,432 B2
• Filed: 02/26/2009
• Issued: 03/22/2011
• Est. Priority Date: 03/17/2008
• Status: Active Grant

• Current Assignee: Kioxia Corporation
• Original Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Inventors: Fukuzumi, Yoshiaki, Katsumata, Ryota, Kito, Masaru, Aochi, Hideaki, Kidoh, Masaru, Tanaka, Hiroyasu, Matsuoka, Yasuyuki
• Primary Examiner(s): Maldonado; Julio J
• Assistant Examiner(s): SCARLETT, SHAKA S
• Application Number:
  US12/393,509
• Publication Number:
  US 20090230462A1
• Time in Patent Office: 754 Days
• Field of Search: None
• US Class Current: 438/257
• CPC Class Codes: H10B 43/20 characterised by three-dimensional arrangements, e.g. with cells on different height levels
• CPC Class Codes: H10B 43/27 the channels comprising vertical portions, e.g. U-shaped channels

Abstract

Each of the memory strings includes: a first columnar semiconductor layer extending in a vertical direction to a substrate; a plurality of first conductive layers formed to sandwich an insulation layer with a charge trap layer and expand in a two-dimensional manner; a second columnar semiconductor layer formed in contact with the top surface of the first columnar semiconductor layer and extending in a vertical direction to the substrate; and a plurality of second conductive layers formed to sandwich an insulation layer with the second columnar semiconductor layer and formed in a stripe pattern extending in a first direction orthogonal to the vertical direction. Respective ends of the plurality of first conductive layers in the first direction are formed in a stepwise manner in relation to each other, entirety of the plurality of the second conductive layers are formed in an area immediately above the top layer of the first conductive layers, and the plurality of first conductive layers and the plurality of second conductive layers are covered with a protection insulation layer that is formed continuously with the plurality of first conductive layers and the second conductive layers.

Claims

1. A non-volatile semiconductor storage device comprising a plurality of memory strings with a plurality of electrically rewritable memory cells connected in series,

each of the memory strings comprising:

a first columnar semiconductor layer extending in a vertical direction to a substrate;

a charge trap layer formed to sandwich an insulation layer with the first columnar semiconductor layer and accumulating charges;

a plurality of first conductive layers formed to sandwich an insulation layer with the charge trap layer and expand in a two-dimensional manner;

a second columnar semiconductor layer formed in contact with the top surface of the first columnar semiconductor layer and extending in a vertical direction to the substrate; and

a plurality of second conductive layers formed to sandwich an insulation layer with the second columnar semiconductor layer and formed in a stripe pattern extending in a first direction orthogonal to the vertical direction;

a protection insulation layer continuously covering over the plurality of first conductive layers and the second conductive layers; and

an interlayer insulation layer formed on the protection insulation layer,

respective ends of the plurality of first conductive layers in the first direction being formed in a stepwise manner in relation to each other,

entirety of the plurality of the second conductive layers being formed in an area immediately above the top layer of the first conductive layers, and

an etching rate of the protection insulation layer being different from an etching rate of the interlayer insulation layer.

2. The non-volatile semiconductor storage device according to claim 1, wherein

the protection insulation layer is formed with the same thickness on the plurality of first conductive layers and on the second conductive layers.

3. The non-volatile semiconductor storage device according to claim 1, wherein

the protection insulation layer is composed of silicon nitride.

4. The non-volatile semiconductor storage device according to claim 1, further comprising:

a control circuit layer provided in the lower layer of the memory strings and controlling the memory strings.

5. The non-volatile semiconductor storage device according to claim 4, wherein

the control circuit layer has a transistor part functioning as a transistor, and

the transistor part is formed in an area immediately below the memory strings.

6. The non-volatile semiconductor storage device according to claim 4, wherein

the control circuit layer has a transistor part functioning as a transistor, and

the transistor part is formed in an area immediately below a peripheral area of the memory strings.

7. The non-volatile semiconductor storage device according to claim 1, wherein

each of the memory strings further comprises:

a third columnar semiconductor layer formed in contact with the bottom surface of the first columnar semiconductor layer and extending in a vertical direction to the substrate; and

a third conductive layer formed to sandwich an insulation layer with the third columnar semiconductor layer and expanding in a direction orthogonal to the vertical direction.

8. The non-volatile semiconductor storage device according to claim 1, further comprising

wirings electrically connected to the memory strings,

wherein each of the wirings comprises:

a plurality of fourth conductive layers extending in the vertical direction so as to penetrate the protection insulation layer, and

wherein the bottom surfaces of the fourth conductive layers are formed in contact with the top surfaces of the plurality of first conductive layers formed in the stepwise manner in relation to each other, or the top surfaces of the second conductive layers.

9. The non-volatile semiconductor storage device according to claim 1, wherein

the first conductive layers and the second conductive layers are composed of polysilicon,

the first columnar semiconductor layers and the second columnar semiconductor layers are composed of polysilicon, and

the charge trap layers are composed of silicon nitride.

10. The non-volatile semiconductor storage device according to claim 7, wherein

the third conductive layers are composed of polysilicon, and

the third columnar semiconductor layers are composed of polysilicon.

11. The non-volatile semiconductor storage device according to claim 8, wherein

the fourth conductive layers include a lamination structure of titanium, or titanium nitride, and tungsten.

12. A method of manufacturing a non-volatile semiconductor storage device having a plurality of memory strings with a plurality of electrically rewritable memory cells connected in series, the method comprising:

alternately laminating a plurality of first interlayer insulation layers and a plurality of first conductive layers;

forming a first hole so as to penetrate the first interlayer insulation layers and the first conductive layers;

forming a first columnar semiconductor layer in the first hole via a charge trap layer;

alternately laminating second interlayer insulation layers and second conductive layers on the first interlayer insulation layers;

forming the second interlayer insulation layers and the second conductive layers in a stripe pattern extending in a first direction orthogonal to a lamination direction;

forming respective ends of the first interlayer insulation layers and respective ends of the first conductive layers in a stepwise manner in relation to each other; and

covering the first interlayer insulation layers, the first conductive layers, the second interlayer insulation layers, and the second conductive layers with a protection insulation layer,

in forming the respective ends in a stepwise manner, the second interlayer insulation layers and the second conductive layers are formed in such a way that the entire second interlayer insulation layers and the entire second conductive layers are formed in an area immediately above the top layer of the first conductive layers.

13. The method of manufacturing the non-volatile semiconductor storage device according to claim 12, wherein

the protection insulation layer is formed with the same thickness either on the plurality of first conductive layers and on the second conductive layers.

14. The non-volatile semiconductor storage device according to claim 12, wherein

the protection insulation layer is composed of silicon nitride.

15. The method of manufacturing the non-volatile semiconductor storage device according to claim 12, the method further comprising:

forming a second hole so as to penetrate the second interlayer insulation layers and the second conductive layers; and

forming a second columnar semiconductor layer in the second hole via a first insulation layer.

16. The method of manufacturing the non-volatile semiconductor storage device according to claim 12, the method comprising:

prior to laminating the first interlayer insulation layers and the first conductive layers,

alternately laminating third interlayer insulation layers and third conductive layers;

forming a third hole so as to penetrate the third interlayer insulation layers and the third conductive layers; and

forming a third columnar semiconductor layer in the third hole via a second insulation layer.

17. The method of manufacturing the non-volatile semiconductor storage device according to claim 12, the method comprising:

forming a fourth interlayer insulation layer to a predetermined height such that the protection insulation layer is filled up with the fourth interlayer insulation layer;

forming a fourth hole so as to penetrate the fourth interlayer insulation layer and the protection insulation layer and to reach the first conductive layers and the second conductive layers; and

forming a fourth conductive layer so as to fill up the fourth hole.

18. The method of manufacturing the non-volatile semiconductor storage device according to claim 12, wherein

the first conductive layers and the second conductive layers are composed of polysilicon,

the first columnar semiconductor layer and the second columnar semiconductor layer are composed of polysilicon, and

the charge trap layer is composed of silicon nitride.

19. The method of manufacturing the non-volatile semiconductor storage device according to claim 16, wherein

the third conductive layers are composed of polysilicon, and

the third columnar semiconductor layer is composed of polysilicon.

20. The method of manufacturing the non-volatile semiconductor storage device according to claim 17, wherein

the fourth conductive layer includes a lamination structure of titanium, or titanium nitride, and tungsten.