Semiconductor device and method for making the same
First Claim
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1. A method for making the semiconductor device comprising:
- concurrently forming a first trench, a second trench wider than the first trench, and a third trench wider than the second trench on the same surface of a semiconductor layer;
forming an oxide film on a surface of the semiconductor layer;
filling up the first trench with conductive material without filling up the second trench and the third trench therewith, through deposition of the conductive material on the semiconductor layer where the oxide film is formed, the conductive material corresponding to a gate electrode;
removing by etching all of the conductive material deposited in the second trench and the third trench with the conductive material being left in the first trench;
filling up the second trench with insulating material without filling up the third trench therewith, through deposition of the insulating material on the semiconductor layer where the oxide film is formed, the insulating material corresponding to an embedded insulation layer;
removing by etching all of the insulating material and all of the oxide film deposited in the third trench with the insulating material being left in the second trench; and
covering at least an inner surface of the third trench with metallic material, through deposition of the metallic material on the semiconductor layer, the metallic material corresponding to an electrode film.
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Abstract
A semiconductor device includes: a first trench that is formed in a semiconductor substrate; a gate oxide film that is formed on a surface of the first trench; and a trench gate electrode that is formed so as to bury the first trench via the gate oxide film. The semiconductor device also includes: a second trench that is formed in the semiconductor substrate with a width wider than the width of the first trench; and a terminal-embedded insulation layer that is formed so as to bury the second trench. The semiconductor device further includes: a third trench that is formed in the semiconductor substrate with a width wider than the width of the second trench; and a trench contact electrode that is formed so as to bury the third trench.
19 Citations
7 Claims
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1. A method for making the semiconductor device comprising:
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concurrently forming a first trench, a second trench wider than the first trench, and a third trench wider than the second trench on the same surface of a semiconductor layer; forming an oxide film on a surface of the semiconductor layer; filling up the first trench with conductive material without filling up the second trench and the third trench therewith, through deposition of the conductive material on the semiconductor layer where the oxide film is formed, the conductive material corresponding to a gate electrode; removing by etching all of the conductive material deposited in the second trench and the third trench with the conductive material being left in the first trench; filling up the second trench with insulating material without filling up the third trench therewith, through deposition of the insulating material on the semiconductor layer where the oxide film is formed, the insulating material corresponding to an embedded insulation layer; removing by etching all of the insulating material and all of the oxide film deposited in the third trench with the insulating material being left in the second trench; and covering at least an inner surface of the third trench with metallic material, through deposition of the metallic material on the semiconductor layer, the metallic material corresponding to an electrode film. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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Current AssigneeKabushiki Kaisha Toshiba (Toshiba Corporation)
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Original AssigneeKabushiki Kaisha Toshiba (Toshiba Corporation)
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InventorsKawano, Takahiro, Ohta, Tsuyoshi
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Primary Examiner(s)Landau; Matthew C
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Assistant Examiner(s)Hall; Jessica
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Application NumberUS11/968,403Publication NumberTime in Patent Office1,175 DaysField of Search438/270, 438/272, 438/700, 438/702, 438/706, 257/E29.121, 257/E29.131, 257/E29.257, 257/E29.262, 257/330, 257/331, 257/332, 257/334US Class Current438/272CPC Class CodesH01L 29/0661 specially adapted for alter...H01L 29/66727 with a step of recessing th...H01L 29/66734 with a step of recessing th...H01L 29/7811 with an edge termination st...H01L 29/7813 with trench gate electrode,...
