Metallic electrode forming method and semiconductor device having metallic electrode

• US 7,910,460 B2
• Filed: 08/05/2010
• Issued: 03/22/2011
• Est. Priority Date: 03/06/2007
• Status: Active Grant

• Current Assignee: DENSO Corporation
• Original Assignee: DENSO Corporation
• Inventors: Kojima, Hisatoshi, Tomisaka, Manabu, Niimi, Akihiro
• Primary Examiner(s): HO, TU TU V
• Application Number:
  US12/805,537
• Publication Number:
  US 20100311191A1
• Time in Patent Office: 229 Days
• Field of Search: 438/464, 438/666, 438/614, 257/773, 257/737, 257/781, 257/E21.508, 257/E21.599
• US Class Current: 438/464
• CPC Class Codes: H01L 21/7684 Smoothing; Planarisation
• CPC Class Codes: H01L 22/12 for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions electrical measurement of diffusions H01L22/14
• CPC Class Codes: H01L 2224/05001 Internal layers
• CPC Class Codes: H01L 2224/05022 the internal layer being at least partially embedded in the surface
• CPC Class Codes: H01L 2224/05099 Material
• CPC Class Codes: H01L 2224/05572 the external layer extending out of an opening
• CPC Class Codes: H01L 2224/05647 Copper [Cu] as principal constituent
• CPC Class Codes: H01L 2224/05666 Titanium [Ti] as principal constituent
• CPC Class Codes: H01L 2224/05686 with a principal constituent of the material being a non metallic, non metalloid inorganic material
• CPC Class Codes: H01L 2224/13099 Material
• CPC Class Codes: H01L 2224/131 with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
• CPC Class Codes: H01L 24/03 Manufacturing methods
• CPC Class Codes: H01L 24/05 of an individual bonding area
• CPC Class Codes: H01L 24/11 Manufacturing methods for bumps on insulating substrates H01L21/4853
• CPC Class Codes: H01L 24/13 of an individual bump connector
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0001 Technical content checked by a classifier
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01006 Carbon [C]
• CPC Class Codes: H01L 2924/01013 Aluminum [Al]
• CPC Class Codes: H01L 2924/01022 : Titanium [Ti]
• CPC Class Codes: H01L 2924/01023 : Vanadium [V]
• CPC Class Codes: H01L 2924/01029 : Copper [Cu]
• CPC Class Codes: H01L 2924/01033 : Arsenic [As]
• CPC Class Codes: H01L 2924/01049 : Indium [In]
• CPC Class Codes: H01L 2924/01052 : Tellurium [Te]
• CPC Class Codes: H01L 2924/01059 : Praseodymium [Pr]
• CPC Class Codes: H01L 2924/01068 : Erbium [Er]
• CPC Class Codes: H01L 2924/01074 : Tungsten [W]
• CPC Class Codes: H01L 2924/01078 : Platinum [Pt]
• CPC Class Codes: H01L 2924/01079 : Gold [Au]
• CPC Class Codes: H01L 2924/01082 : Lead [Pb]
• CPC Class Codes: H01L 2924/014 : Solder alloys
• CPC Class Codes: H01L 2924/04941 : TiN
• CPC Class Codes: H01L 2924/1305 : Bipolar Junction Transistor [BJT]
• CPC Class Codes: H01L 2924/19042 : being an inductor

Abstract

A metallic electrode forming method includes: forming a bed electrode on a substrate; forming a protective film with an opening on the bed electrode to expose the bed electrode from the opening; forming a metallic film covering the protective film and the opening; mounting the substrate on an adsorption stage, and measuring a surface shape of the metallic film by a surface shape measuring means; deforming the substrate by a deforming means so that a difference between the principal surface and a cutting surface is within a predetermined range; measuring a surface shape of the principal surface, and determining whether the difference is within a predetermined range; and cutting the substrate along with the cutting surface so that the metallic film is patterned to be a metallic electrode.

Claims

1. A metallic electrode forming method for a semiconductor device comprising:

forming a bed electrode on a principal surface of a semiconductor substrate, wherein the bed electrode is electrically connected to a semiconductor element;

forming a protective film on the bed electrode, and

forming an opening in the protective film so that the bed electrode is exposed from the opening;

forming a metallic film on the protective film to cover the protective film and the opening of the protective film;

mounting the semiconductor substrate with the metallic film on an adsorption stage, and measuring a surface shape of at least a part of the metallic film by a surface shape measuring means, wherein the adsorption stage adsorbs and fixes the semiconductor substrate on the stage, and wherein the part of the metallic film is disposed on the protective film;

deforming the semiconductor substrate based on a surface shape data of the part of the metallic film by using a deforming means capable of displacing the semiconductor substrate so that a difference between the principal surface of the semiconductor substrate and a cutting surface is within a predetermined range, and wherein the deforming means is disposed on a stage side;

measuring a surface shape of the principal surface of the semiconductor substrate, and determining whether a difference between the cutting surface and the principal surface of the semiconductor substrate is within a predetermined range; and

cutting the semiconductor substrate with the metallic film along with the cutting surface so that the metallic film is patterned to be a metallic electrode when the difference between the cutting surface and the principal surface of the semiconductor substrate is within the predetermined range.

2. The method according to claim 1,

wherein, in the cutting the semiconductor substrate with the metallic film, only a part of the metallic film remains in the opening of the protective film so that the part of the metallic film provides the metallic electrode.

3. The method according to claim 1,

wherein the deforming means is disposed on a backside of the adsorption stage so that the deforming means is opposite to the semiconductor substrate, and wherein the deforming means displaces the semiconductor substrate via the adsorption stage.

4. The method according to claim 1,

wherein the deforming means includes a plurality of actuators, and

wherein each actuator independently displaces the semiconductor substrate.

5. The method according to claim 4,

wherein each actuator is a piezoelectric actuator having a piezoelectric element.

6. The method according to claim 4,

wherein the surface shape measuring means measures the surface shape of the metallic film at a plurality of measurement points, and

wherein the number of measurement points is larger than the number of actuators.

7. The method according to claim 1,

wherein the surface shape measuring means measures the surface shape of the metallic film at a plurality of measurement points, and

wherein the deforming means displaces the semiconductor substrate in such a manner that the deforming means applies displacement to the semiconductor substrate at a plurality of displacement points, each of which corresponds to the measurement point.

8. The method according claim 1,

wherein the surface shape measuring means is a laser displacement gauge, which scans the surface shape of the metallic film along with a plane parallel to the cutting surface.

9. A metallic electrode forming method for a semiconductor device comprising:

forming a bed electrode on a principal surface of a semiconductor substrate, wherein the bed electrode is electrically connected to a semiconductor element;

forming a protective film on the bed electrode, and forming an opening in the protective film so that the bed electrode is exposed from the opening;

forming a metallic film on the protective film to cover the protective film and the opening of the protective film;

mounting the semiconductor substrate on a first adsorption stage to contact the metallic film on the first adsorption stage, wherein the first adsorption stage includes a first flat surface for adsorbing the semiconductor substrate thereon;

arranging the semiconductor substrate over a third adsorption stage in such a manner that the backside surface faces the third adsorption stage, arranging a displacing means under the third adsorption stage in such a manner that the displacing means is opposite to the semiconductor substrate, and applying displacement to the third adsorption stage so that the third adsorption stage fits and contacts the backside surface of the semiconductor substrate; and

adsorbing and fixing the backside surface of the semiconductor substrate on the third adsorption stage, and cutting the semiconductor substrate with the metallic film so that only a part of the metallic film remains in the opening of the protective film, wherein the part of the metallic film provides a metallic electrode.

10. The method according to claim 9,

wherein the displacing means includes a plurality of actuators, and wherein each actuator is capable of controlling the displacement independently.

11. The method according to claim 10,

wherein each actuator is a piezoelectric actuator including a piezoelectric element.