Semiconductor device and manufacturing method thereof
First Claim
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1. A method of manufacturing a semiconductor device comprising:
- forming an oxide semiconductor film over a substrate; and
etching the oxide semiconductor film by using a gas containing at least one of fluorine and chlorine to form a channel region of a thin film transistor,wherein the oxide semiconductor film comprises In—
Ga—
Zn—
O based oxide semiconductor.
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Abstract
An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.
894 Citations
20 Claims
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1. A method of manufacturing a semiconductor device comprising:
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forming an oxide semiconductor film over a substrate; and etching the oxide semiconductor film by using a gas containing at least one of fluorine and chlorine to form a channel region of a thin film transistor, wherein the oxide semiconductor film comprises In—
Ga—
Zn—
O based oxide semiconductor. - View Dependent Claims (2, 3, 4, 5)
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6. A method of manufacturing a semiconductor device comprising:
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forming an oxide semiconductor film over a substrate; and forming the oxide semiconductor film into an island-shaped region by dry etching using a gas containing at least one of fluorine and chlorine, wherein the oxide semiconductor film comprises In-Ga-Zn-O based oxide semiconductor. - View Dependent Claims (7, 8, 9, 10)
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11. A method of manufacturing a semiconductor device comprising:
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forming an oxide semiconductor film over a substrate; and forming the oxide semiconductor film by into an island-shaped region by dry etching using a gas containing at least one of fluorine and chlorine, wherein the oxide semiconductor film comprises In-Ga-Zn-O based oxide semiconductor. - View Dependent Claims (12, 13, 14)
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15. A method of manufacturing a semiconductor device comprising:
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forming an oxide semiconductor film over a substrate; forming a mask of a resist over the oxide semiconductor film; and selectively etching the oxide semiconductor film by using the mask and a gas containing at least one of fluorine and chlorine, wherein the oxide semiconductor film comprises In-Ga-Zn-O based oxide semiconductor. - View Dependent Claims (16, 17, 18, 19, 20)
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Specification