Luminous body, electron beam detector using the same, scanning electron microscope, and mass analysis device
First Claim
1. An electron beam detector, comprising:
- a light-emitting body that emits fluorescence in response to incidence of electrons, said light-emitting body comprising;
a substrate;
a nitride semiconductor layer having a quantum well structure formed on one of faces of said substrate;
a cap layer formed on said nitride semiconductor layer, said cap layer having an electron incidence face; and
a metal backing layer formed on the cap layer; and
wherein a thickness of said cap layer is not more than 10 nm.
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Accused Products
Abstract
A light-emitting body of rapid speed of response and high light emission intensity, and an electron beam detector, scanning electron microscope and mass spectroscope using this are provided. In the light-emitting body 10 according to the present invention, when fluorescence is emitted by a nitride semiconductor layer 14 formed on one face 12a of a substrate 12 in response to incidence of electrons, at least some of this fluorescence is transmitted through this substrate 12, whereby that fluorescence is emitted from the other face 12b of the substrate. The response speed of this fluorescence is not more than μsec order. Also, the intensity of emission of this fluorescence is almost identical to that of a conventional P47 phosphor. Specifically, with this light-emitting body 10, a response speed and light emission intensity are obtained that are fully satisfactory for application to a scanning electron microscope or mass spectroscope. In addition, a cap layer 16 contributes to improvement in the persistence rate of light emission in the nitride semiconductor layer 14, so, with this light-emitting body 10, not only high-speed response and high light emission intensity are obtained, but also an excellent persistence rate.
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Citations
8 Claims
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1. An electron beam detector, comprising:
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a light-emitting body that emits fluorescence in response to incidence of electrons, said light-emitting body comprising;
a substrate;a nitride semiconductor layer having a quantum well structure formed on one of faces of said substrate; a cap layer formed on said nitride semiconductor layer, said cap layer having an electron incidence face; and a metal backing layer formed on the cap layer; and wherein a thickness of said cap layer is not more than 10 nm. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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Specification