Thin film transistor and method of forming the same

• US 7,910,920 B2
• Filed: 12/27/2007
• Issued: 03/22/2011
• Est. Priority Date: 02/16/2007
• Status: Active Grant

• Current Assignee: Samsung Electronics Co. Ltd.
• Original Assignee: Samsung Electronics Co. Ltd.
• Inventors: Kim, Sun-Il, Park, Young-soo, Park, Jae-chul
• Primary Examiner(s): LINDSAY JR, WALTER LEE
• Application Number:
  US12/005,395
• Publication Number:
  US 20080197350A1
• Time in Patent Office: 1,181 Days
• Field of Search: 257/288, 257/E21.159, 257/E29.255, 257/40, 257/43, 438/585, 438/761, 438/149, 438/166
• US Class Current: 257/40
• CPC Class Codes: H01L 29/78609 for preventing leakage current H01L29/78618 takes precedence
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate

Abstract

A thin film transistor (TFT) may include a channel layer, a source electrode, a drain electrode, a protective layer, a gate electrode, and/or a gate insulating layer. The channel layer may include an oxide semiconductor material. The source electrode and the drain electrode may face each other on the channel layer. The protective layer may be under the source electrode and the drain electrode and/or may cover the channel layer. The gate electrode may be configured to apply an electric field to the channel layer. The gate insulating layer may be interposed between the gate electrode and the channel layer.

Claims

1. A thin film transistor, comprising:

a channel layer including an oxide semiconductor material;

a source electrode and a drain electrode facing each other on the channel layer;

a protective layer under the source electrode and the drain electrode and covering the channel layer;

a gate electrode configured to apply an electric field to the channel layer, wherein the gate electrode is above the channel layer; and

a gate insulating layer interposed between the gate electrode and the channel layer.

2. The thin film transistor of claim 1, wherein the channel layer is a ZnO based material layer.

3. The thin film transistor of claim 2, wherein the channel layer is a a(In₂O₃).b(Ga₂O₃).c(ZnO) layer, where a, b, and c are real numbers such that a≧

0, b≧

0, and c>

0.

4. The thin film transistor of claim 3, wherein the channel layer is a a(In₂O₃).b(Ga₂O₃).c(ZnO) layer, where a, b, and c are real numbers such that a≧

1, b≧

1, and 0<

c≦

1.

5. The thin film transistor of claim 1, wherein

the protective layer provides contact regions, and

the channel layer contacts the source and drain electrodes at the contact regions.

6. The thin film transistor of claim 1, wherein the protective layer is at least one selected from a group including a silicon oxide layer and a silicon nitride layer.

7. The thin film transistor of claim 1, further comprising:

ohmic contact layers between the channel layer and the source electrode and between the channel layer and the drain electrode.

8. A method of manufacturing a thin film transistor comprising:

forming a channel layer including an oxide semiconductor material and a protective layer covering the channel layer;

forming a source electrode and a drain electrode facing each other and contacting two regions of the channel layer;

forming a gate insulating layer covering the protective layer, the source electrode, and the drain electrode; and

forming a gate electrode on the gate insulating layer above the channel layer.

9. The method of claim 8, wherein the channel layer is a ZnO based material layer.

10. The method of claim 8, wherein

the protective layer provides contact regions, and

the channel layer contacts the source electrode and the drain electrode at the contact regions.

11. The method of claim 8, wherein the forming of the channel layer and the protective layer comprises:

depositing an oxide semiconductor material film on a substrate;

forming the channel layer by patterning the oxide semiconductor material film;

depositing a protective material film on the substrate and the channel layer; and

forming the protective layer by patterning the protective material film.

12. The method of claim 11, wherein

the protective material film is patterned to a shape providing contact regions, and

the channel layer contacts the source electrode and the drain electrode at the contact regions.

13. The method of claim 11, further comprising:

treating the surface of the channel layer using oxygen plasma after the forming of the channel layer and before the forming of the protective material film.

14. The method of claim 11, further comprising:

wet washing the surface of the channel layer using a washing solution after the forming of the channel layer and before the forming of the protective material film.

15. The method of claim 14, wherein the washing solution for the wet washing is at least one of a solution including isopropyl alcohol (IPA) and deionized water and a solution including acetone, IPA, and deionized water.

16. The method of claim 8, wherein the forming of the channel layer and the protective layer comprises:

depositing an oxide semiconductor material film on a substrate;

depositing a protective material film on the oxide semiconductor material film; and

patterning the oxide semiconductor material film and the protective material film.

17. The method of claim 16, wherein

the protective material film is patterned to a shape that provides contact regions, and

the channel layer contacts the source electrode and the drain electrode at the contact regions.

18. The method of claim 16, wherein the patterning of the oxide semiconductor material film and the protective material film is performed using a halftone photomask or a slit photomask.

19. The method of claim 16, further comprising:

treating the surface of the oxide semiconductor material film using oxygen plasma after the depositing of the oxide semiconductor material film and before the depositing of the protective material film.

20. The method of claim 16, further comprising:

wet washing the surface of the oxide semiconductor material film using a washing solution after the depositing of the oxide semiconductor material film and before the depositing of the protective material film.

21. The method of claim 20, wherein the washing solution for the wet washing is at least one of a solution including isopropyl alcohol (IPA) and deionized water and a solution including acetone, IPA, and deionized water.

22. The method of claim 8, further comprising:

forming ohmic contact layers between the channel layer and the source electrode and between the channel layer and the drain electrode.

23. The method of claim 22, wherein the ohmic contact layers are formed of a conductive oxide having an oxygen content that is less than an oxygen content of the channel layer.

24. A method of manufacturing a thin film transistor, comprising:

forming a gate electrode;

forming a gate insulating layer covering the gate electrode;

forming a channel layer including an oxide semiconductor material on the gate insulating layer above the gate electrode and a protective layer covering the channel layer; and

forming a source electrode and a drain electrode facing each other and contacting two regions of the channel layer,

wherein the forming of the channel layer and the protective layer includes depositing an oxide semiconductor material film on the gate insulating layer, forming the channel layer by patterning the oxide semiconductor material film, treating a surface of the channel layer using oxygen plasma, depositing a protective material film on the gate insulating layer and the surface-treated channel layer, and forming the protective layer by patterning the protective material film.

25. The method of claim 24, wherein the channel layer is a ZnO based material layer.

26. The method of claim 24, wherein

the protective layer provides contact regions, and

the channel layer contacts the source electrode and the drain electrode at the contact regions.

27. The method of claim 24, wherein

the protective material film is patterned to a shape that provides contact regions, and

the channel layer contacts the source electrode and the drain electrode at the contact regions.

28. The method of claim 24, further comprising:

wet washing the surface of the channel layer using a washing solution after the forming of the channel layer and before the forming of the protective material film.

29. The method of claim 28, wherein the washing solution for the wet washing is at least one of a solution including isopropyl alcohol (IPA) and deionized water and a solution including acetone, IPA, and deionized water.

30. The method of claim 24, further comprising:

forming ohmic contact layers between the channel layer and the source electrode and between the channel layer and the drain electrode.

31. The method of claim 30, wherein the ohmic contact layers are formed of a conductive oxide having an oxygen content that is less than an oxygen content of the channel layer.

32. A method of manufacturing a thin film transistor, comprising:

forming a gate electrode;

forming a gate insulating layer covering the gate electrode;

forming a channel layer including an oxide semiconductor material on the gate insulating layer above the gate electrode and a protective layer covering the channel layer; and

forming a source electrode and a drain electrode facing each other and contacting two regions of the channel layer,

wherein the forming of the channel layer and the protective layer includes depositing an oxide semiconductor material film on the gate insulating layer, treating a surface of the oxide semiconductor material film using oxygen plasma, depositing a protective material film on the surface-treated oxide semiconductor material film, and patterning the oxide semiconductor material film and the protective material film.

33. The method of claim 32, wherein

the protective material film is patterned to a shape that provides contact regions, and

the channel layer contacts the source electrode and the drain electrode at the contact regions.

34. The method of claim 32, wherein the patterning of the oxide semiconductor material film and the protective material film is performed using a halftone photomask or a slit photomask.

35. The method of claim 32, further comprising:

wet washing the surface of the oxide semiconductor material film using a washing solution after the depositing of the oxide semiconductor material film and before the depositing of the protective material film.

36. The method of claim 35, wherein the washing solution for the wet washing is at least one of a solution including isopropyl alcohol (IPA) and deionized water and a solution including acetone, IPA, and deionized water.