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Thin film transistor and method of forming the same

  • US 7,910,920 B2
  • Filed: 12/27/2007
  • Issued: 03/22/2011
  • Est. Priority Date: 02/16/2007
  • Status: Active Grant
First Claim
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1. A thin film transistor, comprising:

  • a channel layer including an oxide semiconductor material;

    a source electrode and a drain electrode facing each other on the channel layer;

    a protective layer under the source electrode and the drain electrode and covering the channel layer;

    a gate electrode configured to apply an electric field to the channel layer, wherein the gate electrode is above the channel layer; and

    a gate insulating layer interposed between the gate electrode and the channel layer.

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