Semiconductor device
First Claim
1. A semiconductor device comprising:
- a substrate;
a gate electrode over the substrate;
a gate insulating film including an yttria-stabilized zirconia film over the gate electrode;
a semiconductor film over the gate insulating film; and
an amorphous semiconductor film,wherein the semiconductor film is in contact with the yttria-stabilized zirconia film,wherein the amorphous semiconductor film is located over the semiconductor film and in contact with the semiconductor film, andwherein the amorphous semiconductor film has a depressed portion on a top surface.
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Accused Products
Abstract
An object is to provide a semiconductor device including a microcrystalline semiconductor film with favorable quality and a method for manufacturing the semiconductor device. In a thin film transistor formed using a microcrystalline semiconductor film, yttria-stabilized zirconia having a fluorite structure is formed in the uppermost layer of a gate insulating film in order to improve quality of a microcrystalline semiconductor film to be formed in the initial stage of deposition. The microcrystalline semiconductor film is deposited on the yttria-stabilized zirconia, so that the microcrystalline semiconductor film around an interface with a base particularly has favorable crystallinity while by crystallinity of the base.
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Citations
11 Claims
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1. A semiconductor device comprising:
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a substrate; a gate electrode over the substrate; a gate insulating film including an yttria-stabilized zirconia film over the gate electrode; a semiconductor film over the gate insulating film; and an amorphous semiconductor film, wherein the semiconductor film is in contact with the yttria-stabilized zirconia film, wherein the amorphous semiconductor film is located over the semiconductor film and in contact with the semiconductor film, and wherein the amorphous semiconductor film has a depressed portion on a top surface. - View Dependent Claims (2, 3, 4, 5)
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6. A semiconductor device comprising:
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a substrate; a gate electrode over the substrate; a gate insulating film including an yttria-stabilized zirconia film over the gate electrode; a first semiconductor film over the gate insulating film; a second semiconductor film over the first semiconductor film, the second semiconductor film having a depressed portion on a top surface; a third semiconductor film over the second semiconductor film without the depressed portion of the second semiconductor film; and a conductive film over the third semiconductor film, wherein the first semiconductor film is in contact with the yttria-stabilized zirconia film, and wherein edge portions of the third semiconductor film are located at outside of edge portions of the conductive film. - View Dependent Claims (7, 8, 9, 10, 11)
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Specification