Semiconductor light emitting device and method for manufacturing the same

• US 7,910,942 B2
• Filed: 07/27/2010
• Issued: 03/22/2011
• Est. Priority Date: 04/16/2007
• Status: Active Grant

• Current Assignee: Suzhou Lekin Semiconductor Company Limited
• Original Assignee: LG Innotek Company Limited (LG Corporation)
• Inventors: Yoon, Ho Sang
• Primary Examiner(s): MANDALA, VICTOR A
• Application Number:
  US12/844,646
• Publication Number:
  US 20100289052A1
• Time in Patent Office: 238 Days
• Field of Search: 257/98, 257/E33.005, 257/E33.067, 257/E33.068, 257/E33.074, 438/29, 438/32
• US Class Current: 257/98
• CPC Class Codes: H01L 33/20 with a particular shape, e.g. curved or truncated substrate

Abstract

Disclosed are a semiconductor light emitting device and a method for manufacturing the same. The semiconductor light emitting device comprises a substrate, in which concave-convex patterns are in at least a portion of a backside of the substrate, and a light emitting structure on the substrate and comprising a first conductive semiconductor layer, an active layer and a second conductive semiconductor layer.

Claims

1. A semiconductor light emitting device, comprising:

a substrate, in which concave-convex patterns are in at least one of a top-side and a backside of the substrate; and

a light emitting structure on the substrate and comprising a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer between the first conductive semiconductor layer and the second conductive semiconductor layer,

wherein the concave-convex patterns comprise first concave-convex patterns at a first area of the substrate and second concave-convex patterns at a second area of the substrate,

wherein a concave pattern of the first concave-convex patterns has a depth deeper than a depth of a concave pattern of the second concave-convex patterns.

2. The semiconductor light emitting device as claimed in claim 1, wherein the concave-convex patterns are formed at the backside of the substrate.

3. The semiconductor light emitting device as claimed in claim 1, wherein the substrate comprises one of sapphire (Al₂O₃), GaN, SiC, ZnO, GaP, GaAs and Si.

4. The semiconductor light emitting device as claimed in claim 2, wherein the depth of the concave pattern of the second concave-convex patterns is about 200 to 400 μ

m.

5. The semiconductor light emitting device as claimed in claim 2, wherein a width of the concave pattern of the first concave-convex patterns and a width of the concave pattern of the second concave-convex patterns is 1 μ

m to 10 μ

m.

6. The semiconductor light emitting device as claimed in claim 2, wherein the first concave-convex patterns are aligned in a center area in the backside of the substrate.

7. The semiconductor light emitting device as claimed in claim 1, wherein the concave-convex patterns are aligned at an entire area of the substrate.

8. The semiconductor light emitting device as claimed in claim 7, wherein an interval of the concave pattern of the first concave-convex patterns and an interval of a convex pattern of the second concave-convex patterns are the same.

9. The semiconductor light emitting device as claimed in claim 7, wherein convex patterns of the concave-convex patterns are formed in a stripe shape.

10. The semiconductor light emitting device as claimed in claim 2, wherein the convex patterns of the concave-convex patterns include at least one of a polygonal shape, or a horn-shape.

11. The semiconductor light emitting device as claimed in claim 1, wherein the concave pattern of the first concave-convex patterns has a width wider than a width of the concave pattern of the second concave-convex patterns.

12. The semiconductor light emitting device as claimed in claim 1, wherein the concave pattern of the first concave-convex patterns has a width 1.5 to 2.5 wider than a width of the concave pattern of the second concave-convex patterns.

13. The semiconductor light emitting device as claimed in claim 1, wherein the concave pattern of the second concave-convex patterns has a depth of about 0.1 to 10 μ

m.

14. The semiconductor light emitting device as claimed in claim 1, wherein the first conductive semiconductor layer comprises at least one of GaN, AlGaN, InGaN, InN, AlN or InAlGaN.

15. The semiconductor light emitting device as claimed in claim 2, wherein the concave-convex patterns are aligned at an entire area of the substrate.

16. The semiconductor light emitting device as claimed in claim 15, wherein an interval of the concave pattern of the first concave-convex patterns and an interval of a convex pattern of the second concave-convex patterns are the same.

17. The semiconductor light emitting device as claimed in claim 15, wherein convex patterns of the concave-convex patterns are formed in a stripe shape.

18. The semiconductor light emitting device as claimed in claim 15, wherein the depth of the concave pattern of the second concave-convex patterns is about 0.1 to 10 μ

m.

19. The semiconductor light emitting device as claimed in claim 1, wherein the concave-convex patterns are formed at the top-side of the substrate.