Method and apparatus for use in improving linearity of MOSFET's using an accumulated charge sink
DCFirst Claim
1. An accumulated charge control (ACC) floating body MOSFET (ACC MOSFET), adapted to control nonlinear response of the MOSFET when the MOSFET is operated in an accumulated charge regime, comprising:
- a) a MOSFET having a floating body, wherein the MOSFET is biased to selectively operate in the accumulated charge regime, and wherein accumulated charge is present in the body of the floating body MOSFET when the MOSFET is biased to operate in the accumulated charge regime; and
b) an accumulated charge sink (ACS) operatively coupled to the body of the MOSFET, wherein, when the MOSFET is operated in the accumulated charge regime, an ACS bias voltage (VACS) is applied to the ACS to control the accumulated charge in the MOSFET body or to remove the accumulated charge from the MOSFET body via the ACS;
wherein the MOSFET includes a gate, drain, source, and a gate oxide layer positioned between the gate and the body, and wherein the MOSFET operates in the accumulated charge regime when the MOSFET is biased to operate in an off-state (non-conducting state), and wherein charge accumulates within the body in a region proximate the gate oxide;
wherein the MOSFET body includes a channel region including a gate modulated conductive channel between the source and the drain, and wherein the source, drain and channel have carriers of identical polarity when the MOSFET is biased to operate in an on-state (conducting state), and wherein the MOSFET operates in the accumulated charge regime when the MOSFET is biased to operate in the off-state and when the accumulated charge has a polarity that is opposite to the polarity of the source, drain and channel carriers.
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Abstract
A method and apparatus for use in improving the linearity characteristics of MOSFET devices using an accumulated charge sink (ACS) are disclosed. The method and apparatus are adapted to remove, reduce, or otherwise control accumulated charge in SOI MOSFETs, thereby yielding improvements in FET performance characteristics. In one exemplary embodiment, a circuit having at least one SOI MOSFET is configured to operate in an accumulated charge regime. An accumulated charge sink, operatively coupled to the body of the SOI MOSFET, eliminates, removes or otherwise controls accumulated charge when the FET is operated in the accumulated charge regime, thereby reducing the nonlinearity of the parasitic off-state source-to-drain capacitance of the SOI MOSFET. In RF switch circuits implemented with the improved SOI MOSFET devices, harmonic and intermodulation distortion is reduced by removing or otherwise controlling the accumulated charge when the SOI MOSFET operates in an accumulated charge regime.
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Citations
39 Claims
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1. An accumulated charge control (ACC) floating body MOSFET (ACC MOSFET), adapted to control nonlinear response of the MOSFET when the MOSFET is operated in an accumulated charge regime, comprising:
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a) a MOSFET having a floating body, wherein the MOSFET is biased to selectively operate in the accumulated charge regime, and wherein accumulated charge is present in the body of the floating body MOSFET when the MOSFET is biased to operate in the accumulated charge regime; and b) an accumulated charge sink (ACS) operatively coupled to the body of the MOSFET, wherein, when the MOSFET is operated in the accumulated charge regime, an ACS bias voltage (VACS) is applied to the ACS to control the accumulated charge in the MOSFET body or to remove the accumulated charge from the MOSFET body via the ACS; wherein the MOSFET includes a gate, drain, source, and a gate oxide layer positioned between the gate and the body, and wherein the MOSFET operates in the accumulated charge regime when the MOSFET is biased to operate in an off-state (non-conducting state), and wherein charge accumulates within the body in a region proximate the gate oxide; wherein the MOSFET body includes a channel region including a gate modulated conductive channel between the source and the drain, and wherein the source, drain and channel have carriers of identical polarity when the MOSFET is biased to operate in an on-state (conducting state), and wherein the MOSFET operates in the accumulated charge regime when the MOSFET is biased to operate in the off-state and when the accumulated charge has a polarity that is opposite to the polarity of the source, drain and channel carriers. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 37)
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14. An accumulated charge control floating body MOSFET (ACC MOSFET) adapted to control charge accumulated in the body of the MOSFET when the MOSFET is biased to operate in an accumulated charge regime, comprising:
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a) a gate, drain, source, floating body, and a gate oxide layer positioned between the gate and the floating body, wherein the ACC MOSFET is biased to operate in the accumulated charge regime when the MOSFET is operated in an off-state (non-conducting state) and charge accumulates within the body in a region proximate and underneath the gate oxide layer; and b) a first accumulated charge sink (ACS) positioned proximate a first distal end of the floating body, wherein the first ACS is in electrical communication with the floating body, and wherein, when the MOSFET is operated in the accumulated charge regime, an ACS bias voltage (VACS) is applied to the ACS to control the accumulated charge in the MOSFET body or to remove the accumulated charge from the MOSFET body via the ACS; and an electrical contact region positioned proximate to and in electrical communication with the first ACS, wherein the electrical contact region facilitates electrical coupling to the first ACS. - View Dependent Claims (15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26, 27, 28, 29, 30, 38)
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31. A four-terminal accumulated charge control floating body MOSFET (ACC MOSFET) device, adapted to control charge accumulated in the body of the MOSFET when the MOSFET is biased to operate in an accumulated charge regime, comprising:
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a) a gate, drain, source, floating body, and a gate oxide layer positioned between the gate and the floating body, wherein the ACC MOSFET is biased to operate in the accumulated charge regime when the MOSFET is biased to operate in an off-state (non-conducting state) and charge accumulates within the body in a region proximate and underneath the gate oxide layer; b) an accumulated charge sink (ACS) positioned proximate a distal end of the floating body, wherein the ACS is in electrical communication with the floating body; and c) a gate terminal electrically coupled to the gate, a drain terminal electrically coupled to the drain, a source terminal electrically coupled to the source, and an ACS terminal electrically coupled to the ACS; wherein, when the MOSFET is operated in the accumulated charge regime, an ACS bias voltage (VACS) is applied to the ACS terminal to control the charge accumulated in the body or to remove the accumulated charge from the body via the ACS terminal. - View Dependent Claims (32, 33, 34, 35, 36, 39)
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Specification