Substrate having pattern and method for manufacturing the same, and semiconductor device and method for manufacturing the same

• US 7,915,058 B2
• Filed: 01/19/2006
• Issued: 03/29/2011
• Est. Priority Date: 01/28/2005
• Status: Expired due to Fees

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Aoki, Tomoyuki, Dairiki, Koji
• Primary Examiner(s): Toledo; Fernando L
• Application Number:
  US11/334,474
• Publication Number:
  US 20060170077A1
• Time in Patent Office: 1,895 Days
• Field of Search: 438/22, 438/200, 438/688, 438/715, 438/747, 438/778, 438/782, 438/785
• US Class Current: 438/22
• CPC Class Codes: C03C 17/3649 made of metals other than silver
• CPC Class Codes: G02F 1/13439 characterised by their electrical, optical, physical properties; materials therefor; method of making
• CPC Class Codes: H01L 21/4867 Applying pastes or inks, e.g. screen printing H01L21/486 takes precedence
• CPC Class Codes: H01L 21/6835 using temporarily an auxiliary support
• CPC Class Codes: H01L 23/49894 Materials of the insulating layers or coatings
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: H01L 2924/09701 Low temperature co-fired ceramic [LTCC]
• CPC Class Codes: H01L 2924/3011 Impedance
• CPC Class Codes: H10K 50/841 Self-supporting sealing arrangements
• CPC Class Codes: H10K 59/12 Active-matrix OLED [AMOLED] displays
• CPC Class Codes: H10K 59/131 Interconnections, e.g. wiring lines or terminals
• CPC Class Codes: H10K 59/17 Passive-matrix OLED displays
• CPC Class Codes: H10K 59/87 Passivation; Containers; Encapsulations
• CPC Class Codes: H10K 59/871 Self-supporting sealing arrangements
• CPC Class Codes: H10K 71/60 Forming conductive regions or layers, e.g. electrodes

Abstract

The present invention provides a method for manufacturing a substrate having a pattern that is capable of controlling the distance between adjacent film patterns, and also provides a method for manufacturing a substrate, particularly, having a pattern with a narrow width and a thickness that is capable of controlling the width between the film patterns. The present invention provides a method for manufacturing a substrate having a conductive film that serves as an antenna with a little variation in inductance and has a large electromotive force, and provides a method for manufacturing a semiconductor device with high yield. After forming a film in which silicon and oxygen are combined and an inactive group is combined with the silicon over a substrate, an insulating film, or a conductive film, a composition is printed by the printing method thereover, and is baked to form a film pattern.

Claims

1. A method for manufacturing a substrate having a film pattern comprising:

forming a film on a substrate in which silicon combines with oxygen and an inactive group;

printing a composition on the film by screen printing method through mesh; and

baking the composition to form a film pattern with a thickness of 5 to 40 μ

m, wherein the thickness is obtained after a single printing and baking.

2. The method for manufacturing the substrate having the film pattern according to claim 1, wherein the film pattern comprises a conductive material, an insulating material, or a semiconductor material.

3. The method for manufacturing the substrate having the film pattern according to claim 1, wherein the film is formed on an entire surface of the substrate.

4. The method for manufacturing the substrate having the film pattern according to claim 1, wherein the inactive group is a fluoroalkyl group or an alkyl group.

5. The method for manufacturing the substrate having the film pattern according to claim 1, wherein the film pattern has substantially the same width as opening portions of a screen printing plate.

6. A method for manufacturing a semiconductor device comprising:

forming a film on an insulating film in which silicon combines with oxygen and an inactive group;

printing a composition on the film by screen printing method through mesh; and

baking the composition to form a film pattern with a thickness of 5 to 40 μ

m, wherein the thickness is obtained after a single printing and baking.

7. The method for manufacturing the semiconductor device according to claim 6, wherein the film is formed on an entire surface of the insulating film.

8. The method for manufacturing the semiconductor device according to claim 6, wherein the film pattern comprises a conductive material, an insulating material, or a semiconductor material.

9. The method for manufacturing the semiconductor device according to claim 6, wherein the film pattern has substantially the same width as opening portions of a screen printing plate.

10. A method for manufacturing a semiconductor device comprising:

forming a semiconductor element over a substrate;

forming a conductive film connecting to the semiconductor element;

forming an insulating film covering the semiconductor element and the conductive film, the insulating film having an opening portion to expose part of the conductive film;

forming a film on the insulating film and the exposed conductive film in which silicon combines with oxygen and an inactive group;

printing a composition over the film by screen printing method through mesh; and

baking the composition to form a conductive pattern with a thickness of 5 to 40 μ

m, wherein the thickness is obtained after a single printing and baking.

11. The method for manufacturing the semiconductor device according to claim 10, wherein the film is formed on entire surfaces of the insulating film and the exposed conductive film.

12. The method for manufacturing the semiconductor device according to a claim 10, wherein the conductive pattern serves as an antenna, an electrode, or a wiring.

13. The method for manufacturing the semiconductor device according to claim 10, wherein the inactive group is a fluoroalkyl group or an alkyl group.

14. The method for manufacturing the semiconductor device according to a claim 10, wherein the conductive pattern has substantially the same width as opening portions of a screen printing plate.