Substrate having pattern and method for manufacturing the same, and semiconductor device and method for manufacturing the same
First Claim
1. A method for manufacturing a substrate having a film pattern comprising:
- forming a film on a substrate in which silicon combines with oxygen and an inactive group;
printing a composition on the film by screen printing method through mesh; and
baking the composition to form a film pattern with a thickness of 5 to 40 μ
m, wherein the thickness is obtained after a single printing and baking.
1 Assignment
0 Petitions
Accused Products
Abstract
The present invention provides a method for manufacturing a substrate having a pattern that is capable of controlling the distance between adjacent film patterns, and also provides a method for manufacturing a substrate, particularly, having a pattern with a narrow width and a thickness that is capable of controlling the width between the film patterns. The present invention provides a method for manufacturing a substrate having a conductive film that serves as an antenna with a little variation in inductance and has a large electromotive force, and provides a method for manufacturing a semiconductor device with high yield. After forming a film in which silicon and oxygen are combined and an inactive group is combined with the silicon over a substrate, an insulating film, or a conductive film, a composition is printed by the printing method thereover, and is baked to form a film pattern.
-
Citations
14 Claims
-
1. A method for manufacturing a substrate having a film pattern comprising:
-
forming a film on a substrate in which silicon combines with oxygen and an inactive group; printing a composition on the film by screen printing method through mesh; and baking the composition to form a film pattern with a thickness of 5 to 40 μ
m, wherein the thickness is obtained after a single printing and baking. - View Dependent Claims (2, 3, 4, 5)
-
-
6. A method for manufacturing a semiconductor device comprising:
-
forming a film on an insulating film in which silicon combines with oxygen and an inactive group; printing a composition on the film by screen printing method through mesh; and baking the composition to form a film pattern with a thickness of 5 to 40 μ
m, wherein the thickness is obtained after a single printing and baking. - View Dependent Claims (7, 8, 9)
-
-
10. A method for manufacturing a semiconductor device comprising:
-
forming a semiconductor element over a substrate; forming a conductive film connecting to the semiconductor element; forming an insulating film covering the semiconductor element and the conductive film, the insulating film having an opening portion to expose part of the conductive film; forming a film on the insulating film and the exposed conductive film in which silicon combines with oxygen and an inactive group; printing a composition over the film by screen printing method through mesh; and baking the composition to form a conductive pattern with a thickness of 5 to 40 μ
m, wherein the thickness is obtained after a single printing and baking. - View Dependent Claims (11, 12, 13, 14)
-
Specification