Backside illuminated image sensor with reduced dark current

• US 7,915,067 B2
• Filed: 07/09/2008
• Issued: 03/29/2011
• Est. Priority Date: 07/09/2008
• Status: Active Grant

• Current Assignee: Omnivision Technologies Incorporated (Will Semiconductor Co., Ltd. Shanghai)
• Original Assignee: Eastman Kodak Company
• Inventors: Brady, Frederick T., McCarten, John P.
• Primary Examiner(s): Bryant; Kiesha R
• Assistant Examiner(s): Yang; Minchul
• Application Number:
  US12/169,723
• Publication Number:
  US 20100006970A1
• Time in Patent Office: 993 Days
• Field of Search: 438/60, 438/66, 438/67, 438/75, 438/401, 257/E21.617
• US Class Current: 438/60
• CPC Class Codes: H01L 21/84 the substrate being other than a semiconductor body, e.g. being an insulating body
• CPC Class Codes: H01L 27/1203 the substrate comprising an insulating body on a semiconductor body, e.g. SOI three-dimensional layout H01L27/0688
• CPC Class Codes: H01L 27/14601 Structural or functional details thereof
• CPC Class Codes: H01L 27/1464 Back illuminated imager structures
• CPC Class Codes: H01L 27/14683 Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof not peculiar thereto H01L21/00

Abstract

A backside illuminated image sensor comprises a sensor layer implementing a plurality of photosensitive elements of a pixel array, and an oxide layer adjacent a backside surface of the sensor layer. The sensor layer comprises a seed layer and an epitaxial layer formed over the seed layer, with the seed layer having a cross-sectional doping profile in which a designated dopant is substantially confined to a pixel array area of the sensor layer. The doping profile advantageously reduces dark current generated at an interface between the sensor layer and the oxide layer. The image sensor may be implemented in a digital camera or other type of digital imaging device.

Claims

1. A wafer level processing method for forming a plurality of image sensors each having a pixel array configured for backside illumination, the image sensors being formed utilizing an image sensor wafer, the image sensor wafer comprising a substrate, a buried oxide layer formed over the substrate, and a seed layer formed over the buried oxide layer, the method comprising:

forming a sacrificial oxide layer over a frontside of the seed layer;

depositing a photoresist over the sacrificial oxide layer;

patterning the photoresist to expose only pixel array areas of the image sensor wafer, wherein each pixel array area defines an area where a pixel array for a respective one of the plurality of image sensors will be formed;

implanting a dopant having an n conductivity type into the frontside of the seed layer in only the exposed pixel array areas to form a doped seed layer where the implanted dopant extends to an interface between a backside of the seed layer and the buried oxide layer;

after implanting the dopant into the frontside of the seed layer in only the exposed pixel array areas, removing the photoresist and removing the sacrificial oxide layer;

after removing the sacrificial oxide layer, forming an epitaxial layer having a p conductivity type over the frontside of the doped seed layer; and

after the epitaxial layer is formed, further processing the image sensor wafer to form the plurality of image sensors, wherein the further processing includes forming the pixel arrays for the plurality of image sensors.

2. The method of claim 1 further comprising forming alignment marks that extend through the sacrificial oxide layer and the seed layer to a frontside surface of the buried oxide layer.

3. The method of claim 1 wherein the n-type dopant comprises one of arsenic and phosphorus.

4. The method of claim 1 wherein the p-type dopant comprises one of boron and indium.

5. The method of claim 1 wherein implanting a dopant having an n conductivity type into the seed layer in only the exposed pixel array areas further comprises implanting the dopant having the n conductivity type through the sacrificial oxide layer and into the seed layer in only the exposed pixel array areas.

6. The method of claim 1 wherein implanting a dopant having an n conductivity type into the seed layer in only the exposed pixel array areas further comprises etching openings in the sacrificial oxide layer in respective ones of the exposed pixel array areas and implanting the dopant having the n conductivity type through the etched openings into the seed layer.

7. The method of claim 1 further comprising annealing the image sensor wafer prior to removing the sacrificial oxide layer.

8. The method of claim 1 further comprising forming photosensitive elements of the pixel arrays in the epitaxial layer.

9. The method of claim 1 further comprising removing the substrate to expose a backside surface of the buried oxide layer.

10. The method of claim 1 further comprising separating the image sensor wafer into the plurality of image sensors.

11. The method of claim 1 wherein the image sensor wafer comprises a silicon-on-insulator (SOI) wafer.