Method of making a diode read/write memory cell in a programmed state
First Claim
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1. A method of making a diode, comprising:
- forming a first electrode;
forming a semiconductor region in electrical contact with the first electrode, wherein the semiconductor region comprises a p-n or a p-i-n junction in at least one silicon, germanium or silicon-germanium layer;
forming a titanium layer on the semiconductor region;
forming a titanium nitride layer on the titanium layer;
reacting the titanium layer with the semiconductor region to form a titanium silicide, titanium germanide, or titanium silicide-germanide layer on the semiconductor region;
removing the titanium nitride layer and a remaining portion of the titanium layer after the step of reacting; and
forming a second electrode in electrical contact with the titanium silicide, titanium germanide or titanium silicide-germanide layer.
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Abstract
A method of making a nonvolatile memory device includes fabricating a diode in a low resistivity, programmed state without an electrical programming step. The memory device includes at least one memory cell. The memory cell is constituted by the diode and electrically conductive electrodes contacting the diode.
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Citations
10 Claims
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1. A method of making a diode, comprising:
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forming a first electrode; forming a semiconductor region in electrical contact with the first electrode, wherein the semiconductor region comprises a p-n or a p-i-n junction in at least one silicon, germanium or silicon-germanium layer; forming a titanium layer on the semiconductor region; forming a titanium nitride layer on the titanium layer; reacting the titanium layer with the semiconductor region to form a titanium silicide, titanium germanide, or titanium silicide-germanide layer on the semiconductor region; removing the titanium nitride layer and a remaining portion of the titanium layer after the step of reacting; and forming a second electrode in electrical contact with the titanium silicide, titanium germanide or titanium silicide-germanide layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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Specification