Thin film transistor and organic light emitting display using the same
First Claim
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1. A thin film transistor, comprising:
- a substrate;
a semiconductor layer on the substrate, the semiconductor layer comprising a P-type semiconductor layer comprising an N-type zinc oxide semiconductor and phosphorus diffused in the zinc oxide semiconductor, wherein the phosphorus is diffused in the N-type zinc oxide semiconductor to a concentration ranging from about 1×
1014 to about 1×
1018 cm˜
3 to convert the N-type zinc oxide semiconductor to a P-type semiconductor;
a gate electrode on the substrate; and
source/drain electrodes on the substrate.
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Abstract
Thin film transistors and organic light emitting displays using the same are provided. The thin film transistor may include a substrate, a semiconductor layer, a gate electrode, and source/drain electrodes on the substrate. The semiconductor layer is composed of a P-type semiconductor layer obtained by diffusing phosphorus into a zinc oxide semiconductor. The phosphorus is doped in the semiconductor layer to a concentration ranging from about 1×1014 to about 1×1018 cm−3.
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Citations
16 Claims
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1. A thin film transistor, comprising:
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a substrate; a semiconductor layer on the substrate, the semiconductor layer comprising a P-type semiconductor layer comprising an N-type zinc oxide semiconductor and phosphorus diffused in the zinc oxide semiconductor, wherein the phosphorus is diffused in the N-type zinc oxide semiconductor to a concentration ranging from about 1×
1014 to about 1×
1018 cm˜
3 to convert the N-type zinc oxide semiconductor to a P-type semiconductor;a gate electrode on the substrate; and source/drain electrodes on the substrate. - View Dependent Claims (2)
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3. A method of manufacturing a thin film transistor, comprising:
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patterning a gate electrode on a substrate; forming a gate insulating layer on the gate electrode; forming a semiconductor layer on the gate insulating layer, the semiconductor layer comprising N-type zinc oxide semiconductor; diffusing a phosphorus compound in the semiconductor layer to convert the N-type zinc oxide semiconductor to a P-type semiconductor to thereby form a P-type semiconductor layer; and forming source/drain electrodes on the P-type semiconductor layer. - View Dependent Claims (4, 5, 6, 7, 8)
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9. A method of manufacturing a thin film transistor, comprising:
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forming a semiconductor layer comprising source/drain regions and a channel region on a substrate, the semiconductor layer comprising a zinc oxide semiconductor; diffusing a phosphorus compound in the semiconductor layer to form a P-type semiconductor layer; forming a gate insulating layer on the semiconductor layer; forming a gate electrode on the gate insulating layer in a region corresponding to the channel region of the semiconductor layer; forming an interlayer insulation layer on the gate electrode; and electrically coupling source/drain electrodes to the semiconductor layer through contact holes in the gate insulating layer and the interlayer insulation layer. - View Dependent Claims (10, 11, 12, 13, 14)
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15. An organic light emitting display, comprising:
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a thin film transistor comprising; a substrate, a semiconductor layer comprising a P-type semiconductor layer comprising an N-type zinc oxide semiconductor and phosphorus diffused in the N-type zinc oxide semiconductor, wherein the phosphorus is diffused in the N-type zinc oxide semiconductor to a concentration ranging from about 1×
1014 to about 1×
1018 cm−
3 to convert the N-type zinc oxide semiconductor to a P-type semiconductor,a gate electrode, and source/drain electrodes on the substrate; and an organic light emitting diode electrically coupled to the thin film transistor. - View Dependent Claims (16)
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Specification