Nonvolatile memory devices and methods of fabricating the same
First Claim
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1. A method of fabricating a nonvolatile memory device, the method comprising:
- forming a floating gate electrode on a semiconductor substrate, the floating gate electrode including an acute-angled tip at an upper end; and
forming a control gate electrode insulated from the floating gate electrode, and facing at least a portion of the floating gate electrode, an angle formed between the semiconductor substrate and an upper portion of a lateral surface of the floating gate electrode being smaller than an angle formed between the semiconductor substrate and a lower portion of the lateral surface of the floating gate electrode,wherein forming the floating gate electrode includes;
forming a stacked structure with a sacrificial film and a mask film, the stacked structure having an opening on the semiconductor substrate;
forming a sacrificial spacer film on the stacked structure having the opening and the semiconductor substrate, the sacrificial spacer film and the sacrificial film being formed of a same material;
forming a sacrificial spacer on a side of the opening by etching the sacrificial spacer film while the mask film protects the sacrificial film;
forming a floating gate conductive film inside the opening where the sacrificial spacer is formed, the mask film being removed after forming the floating gate conductive film inside the opening; and
removing the sacrificial film and the sacrificial spacer.
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Abstract
A nonvolatile memory device may include a semiconductor substrate, a floating gate electrode on the semiconductor substrate that includes an acute-angled tip at an upper end, and a control gate electrode insulated from the floating gate electrode and facing at least a portion of the floating gate electrode, wherein an angle formed between the semiconductor substrate and an upper portion of a lateral surface of the floating gate electrode is smaller than an angle formed between the semiconductor substrate and a lower portion of the lateral surface of the floating gate electrode.
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Citations
13 Claims
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1. A method of fabricating a nonvolatile memory device, the method comprising:
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forming a floating gate electrode on a semiconductor substrate, the floating gate electrode including an acute-angled tip at an upper end; and forming a control gate electrode insulated from the floating gate electrode, and facing at least a portion of the floating gate electrode, an angle formed between the semiconductor substrate and an upper portion of a lateral surface of the floating gate electrode being smaller than an angle formed between the semiconductor substrate and a lower portion of the lateral surface of the floating gate electrode, wherein forming the floating gate electrode includes; forming a stacked structure with a sacrificial film and a mask film, the stacked structure having an opening on the semiconductor substrate; forming a sacrificial spacer film on the stacked structure having the opening and the semiconductor substrate, the sacrificial spacer film and the sacrificial film being formed of a same material; forming a sacrificial spacer on a side of the opening by etching the sacrificial spacer film while the mask film protects the sacrificial film; forming a floating gate conductive film inside the opening where the sacrificial spacer is formed, the mask film being removed after forming the floating gate conductive film inside the opening; and removing the sacrificial film and the sacrificial spacer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
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12. A method of fabricating a nonvolatile memory device, the method comprising:
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forming a floating gate electrode on a semiconductor substrate, the floating gate electrode including an acute-angled tip at an upper end; and forming a control gate electrode insulated from the floating gate electrode, and facing at least a portion of the floating gate electrode, an angle formed between the semiconductor substrate and an upper portion of a lateral surface of the floating gate electrode being smaller than an angle formed between the semiconductor substrate and a lower portion of the lateral surface of the floating gate electrode, wherein forming the floating gate electrode includes; forming a stacked structure with a sacrificial film and a mask film, the stacked structure having an opening on the semiconductor substrate; forming a sacrificial spacer film on the stacked structure having the opening and the semiconductor substrate; forming a sacrificial spacer on a side of the opening by etching the sacrificial spacer film while the mask film protects the sacrificial film; forming a floating gate conductive film inside the opening where the sacrificial spacer is formed, the mask film being removed after forming the floating gate conductive film inside the opening; and removing the sacrificial film and the sacrificial spacer. - View Dependent Claims (13)
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Specification
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Current AssigneeSamsung Electronics Co. Ltd.
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Original AssigneeSamsung Electronics Co. Ltd.
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InventorsHan, Hyun-sug, Park, Se-jong, Yang, Bong-gil, Uom, Jung-sup, Ju, Sup-youl
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Primary Examiner(s)Kebede; Brook
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Application NumberUS11/634,879Publication NumberTime in Patent Office1,573 DaysField of Search438257-267, 257314-320, 257/E21.679, 257/E21.68, 257/E21.687, 257/E21.688US Class Current438/257CPC Class CodesH01L 29/40114 the electrodes comprising a...H01L 29/42324 Gate electrodes for transis...H01L 29/7885 Hot carrier injection from ...
