Manufacturing method of semiconductor device
First Claim
1. A method of forming a semiconductor device, comprising:
- providing a substrate;
forming a gate structure on the substrate, wherein the gate structure comprises a high-k layer, a work function metal layer, a wetting layer, a polysilicon layer and a mask layer sequentially formed on the substrate;
forming a spacer on a sidewall of the gate structure;
forming source/drain regions in the substrate beside the gate structure;
forming an interlayer dielectric layer over the substrate;
removing a portion of the interlayer dielectric layer to expose a surface of the mask layer;
sequentially removing the mask layer and the polysilicon layer to expose a surface of the wetting layer; and
performing a selective chemical vapor deposition (CVD) process, so as to bottom-up deposit a metal layer from the surface of the wetting layer.
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Abstract
A method of forming a semiconductor device is described. First, a substrate is provided. Thereafter, a gate structure including, from bottom to top, a high-k layer, a work function metal layer, a wetting layer, a polysilicon layer and a mask layer is formed on the substrate. Afterwards, a spacer is formed on the sidewall of the gate structure. Source/drain regions are then formed in the substrate beside the gate structure. Further, an interlayer dielectric layer is formed over the substrate. Thereafter, a portion of the interlayer dielectric layer is removed to expose the surface of the mask layer. Afterwards, the mask layer and the polysilicon layer are sequentially removed to expose the surface of the wetting layer. A selective chemical vapor deposition process is then performed, so as to bottom-up deposit a metal layer from the surface of the wetting layer.
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Citations
20 Claims
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1. A method of forming a semiconductor device, comprising:
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providing a substrate; forming a gate structure on the substrate, wherein the gate structure comprises a high-k layer, a work function metal layer, a wetting layer, a polysilicon layer and a mask layer sequentially formed on the substrate; forming a spacer on a sidewall of the gate structure; forming source/drain regions in the substrate beside the gate structure; forming an interlayer dielectric layer over the substrate; removing a portion of the interlayer dielectric layer to expose a surface of the mask layer; sequentially removing the mask layer and the polysilicon layer to expose a surface of the wetting layer; and performing a selective chemical vapor deposition (CVD) process, so as to bottom-up deposit a metal layer from the surface of the wetting layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20)
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Specification