III-V nitride substrate boule and method of making and using the same
First Claim
1. A III-V nitride article comprising a boule, wafer, or epitaxial layer, doped by nuclear transmutation doping to yield a room temperature electron concentration of from 1E15 to 5E19 cm−
- 3, wherein the III-V nitride comprises at least one of AI and Ga, and an effective amount of AI or Ga metal atoms originally present in the article have been converted to a dopant element as a result of said nuclear transmutation doping, and the III-V nitride article further comprises an epitaxially compatible non-native seed crystal or substrate.
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Abstract
A boule formed by high rate vapor phase growth of Group III-V nitride boules (ingots) on native nitride seeds, from which wafers may be derived for fabrication of microelectronic device structures. The boule is of microelectronic device quality, e.g., having a transverse dimension greater than 1 centimeter, a length greater than 1 millimeter, and a top surface defect density of less than 107 defects cm−2. The Group III-V nitride boule may be formed by growing a Group III-V nitride material on a corresponding native Group III-V nitride seed crystal by vapor phase epitaxy at a growth rate above 20 micrometers per hour. Nuclear transmutation doping may be applied to an (Al,Ga,In)N article comprises a boule, wafer, or epitaxial layer.
47 Citations
27 Claims
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1. A III-V nitride article comprising a boule, wafer, or epitaxial layer, doped by nuclear transmutation doping to yield a room temperature electron concentration of from 1E15 to 5E19 cm−
- 3, wherein the III-V nitride comprises at least one of AI and Ga, and an effective amount of AI or Ga metal atoms originally present in the article have been converted to a dopant element as a result of said nuclear transmutation doping, and the III-V nitride article further comprises an epitaxially compatible non-native seed crystal or substrate.
- View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13)
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14. A method comprising nuclear transmutation doping of a III-V nitride article comprising a boule, wafer, or epitaxial layer, wherein the III-V nitride comprises at least one of Al and Ga, and the method converts an effective amount of AI or Ga metal atoms originally present in the article to a dopant element as a result of said nuclear transmutation doping, further comprising one of the following steps (a) and (b):
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(a) growing the III-V nitride article with a feed material comprising isotopically pure 3171Ga; and (b) growing the III-V nitride article on an epitaxially compatible non-native seed crystal or substrate. - View Dependent Claims (15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26, 27)
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Specification