ZnO-based thin film transistor and method of manufacturing the same
First Claim
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1. A thin film transistor comprising:
- a substrate;
a channel layer comprising ZnO disposed on the substrate;
a gate disposed between the substrate and the channel layer;
a gate insulating layer disposed between the channel layer and the gate;
a source electrode and a drain electrode disposed on both sides of the channel layer; and
a passivation layer covering the channel layer, the source electrode, and the drain electrode,wherein the channel layer comprises a chloride, and wherein the chloride is distributed in a region near an upper surface of the channel layer.
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Abstract
A ZnO-based thin film transistor (TFT) is provided herein, as is a method of manufacturing the TFT. The ZnO-based TFT has a channel layer that comprises ZnO and ZnCl, wherein the ZnCl has a higher bonding energy than ZnO with respect to plasma. The ZnCl is formed through the entire channel layer, and specifically is formed in a region near the surface of the channel layer. Since the ZnCl is strong enough not to be decomposed when exposed to plasma etching gas, an increase in the carrier concentration can be prevented. The distribution of ZnCl in the channel layer, may result from the inclusion of chlorine (Cl) in the plasma gas during the patterning of the channel layer.
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Citations
6 Claims
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1. A thin film transistor comprising:
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a substrate; a channel layer comprising ZnO disposed on the substrate; a gate disposed between the substrate and the channel layer; a gate insulating layer disposed between the channel layer and the gate; a source electrode and a drain electrode disposed on both sides of the channel layer; and a passivation layer covering the channel layer, the source electrode, and the drain electrode, wherein the channel layer comprises a chloride, and wherein the chloride is distributed in a region near an upper surface of the channel layer. - View Dependent Claims (2, 3, 4, 5, 6)
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Specification
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Current AssigneeSamsung Electronics Co. Ltd.
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Original AssigneeSamsung Electronics Co. Ltd.
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InventorsSon, Kyung-seok, Ryu, Myung-kwan, Lee, Sang-yoon, Jung, Ji-sim, Kim, Tae-sang, Park, Kyung-bae, Hwang, Euk-che, Kwon, Jang-yeon, Kim, Jun-seong
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Primary Examiner(s)EVERHART, CARIDAD
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Application NumberUS12/615,315Publication NumberTime in Patent Office504 DaysField of Search257/43, 257/E27.014, 257/E31.003, 257/E31.037, 257/E31.034, 438/104US Class Current257/43CPC Class CodesH01L 29/7869 having a semiconductor body...
