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ZnO-based thin film transistor and method of manufacturing the same

  • US 7,915,610 B2
  • Filed: 11/10/2009
  • Issued: 03/29/2011
  • Est. Priority Date: 05/17/2007
  • Status: Expired due to Fees
First Claim
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1. A thin film transistor comprising:

  • a substrate;

    a channel layer comprising ZnO disposed on the substrate;

    a gate disposed between the substrate and the channel layer;

    a gate insulating layer disposed between the channel layer and the gate;

    a source electrode and a drain electrode disposed on both sides of the channel layer; and

    a passivation layer covering the channel layer, the source electrode, and the drain electrode,wherein the channel layer comprises a chloride, and wherein the chloride is distributed in a region near an upper surface of the channel layer.

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