Monolithic vertically integrated composite group III-V and group IV semiconductor device and method for fabricating same

• US 7,915,645 B2
• Filed: 05/28/2009
• Issued: 03/29/2011
• Est. Priority Date: 05/28/2009
• Status: Expired due to Fees

• Current Assignee: Infineon Technologies Americas Corp. (Infineon Technologies AG)
• Original Assignee: International Rectifier Corporation (Infineon Technologies AG)
• Inventors: Briere, Michael A.
• Primary Examiner(s): Soward; Ida M
• Application Number:
  US12/455,117
• Publication Number:
  US 20100301396A1
• Time in Patent Office: 670 Days
• Field of Search: 257/195, 257/200, 257/201, 257/E27.027
• US Class Current: 257/195
• CPC Class Codes: H01L 21/8221 Three dimensional integrated circuits stacked in different levels
• CPC Class Codes: H01L 21/8258 the substrate being a semiconductor, using a combination of technologies covered by H01L21/8206, H01L21/8213 , H01L21/822, H01L21/8252, H01L21/8254 or H01L21/8256
• CPC Class Codes: H01L 23/481 Internal lead connections, e.g. via connections, feedthrough structures
• CPC Class Codes: H01L 23/535 including internal interconnections, e.g. cross-under constructions internal lead connections H01L23/481
• CPC Class Codes: H01L 27/0605 integrated circuits made of compound material, e.g. AIIIBV
• CPC Class Codes: H01L 27/0629 in combination with diodes, or resistors, or capacitors
• CPC Class Codes: H01L 27/0694 comprising components formed on opposite sides of a semiconductor substrate
• CPC Class Codes: H01L 29/16 including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
• CPC Class Codes: H01L 29/2003 Nitride compounds
• CPC Class Codes: H01L 29/205 in different semiconductor regions , e.g. heterojunctions
• CPC Class Codes: H01L 29/778 with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface H01L29/803 takes precedence
• CPC Class Codes: H01L 29/7786 with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT
• CPC Class Codes: H01L 29/78 with field effect produced by an insulated gate H01L29/7725, H01L29/775, H01L29/778 take precedence
• CPC Class Codes: H01L 29/861 Diodes
• CPC Class Codes: H01L 29/872 Schottky diodes
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: H03K 17/567 Circuits characterised by the use of more than one type of semiconductor device, e.g. BIMOS, composite devices such as IGBT

Abstract

According to one disclosed embodiment, a monolithic vertically integrated composite device comprises a double sided semiconductor substrate having first and second sides, a group IV semiconductor layer formed over the first side and comprising at least one group IV semiconductor device, and a group III-V semiconductor body formed over the second side and comprising at least one group III-V semiconductor device electrically coupled to the at least one group IV semiconductor device. The composite device may further comprise a substrate via and/or a through-wafer via providing electric coupling. In one embodiment, the group IV semiconductor layer may comprise an epitaxial silicon layer, and the at least one group IV semiconductor device may be a combined FET and Schottky diode (FETKY) fabricated on the epitaxial silicon layer. In one embodiment, the at least one group III-V semiconductor device may be a III-nitride high electron mobility transistor (HEMT).

Claims

1. A monolithic vertically integrated composite device comprising:

a double sided finished semiconductor substrate having first and second finished sides;

a group IV semiconductor layer formed over said first side and comprising at least one group IV semiconductor device; and

a group III-V semiconductor body formed over said second side and comprising at least one group semiconductor device electrically coupled to said at least one group IV semiconductor device.

2. The monolithic vertically integrated composite device of claim 1, wherein said group IV semiconductor layer comprises an epitaxial layer grown over said first finished side.

3. The monolithic vertically integrated composite device of claim 1, further comprising a substrate via electrically coupling said at least one group III-V semiconductor device to said at least one group IV semiconductor device.

4. The monolithic vertically integrated composite device of claim 1, further comprising a through-wafer via electrically coupling said at least one group III-V semiconductor device to said at least one group IV semiconductor device.

6. The monolithic vertically integrated composite device of claim 1, wherein said group III-V semiconductor body comprises at least one III-nitride layer.

7. The monolithic vertically integrated composite device of claim 1, wherein said group III-V semiconductor body comprises a heterojunction formed at an interface of a gallium nitride (GaN) layer and an aluminum gallium nitride (AIGaN) layer.

8. The monolithic vertically integrated composite device of claim 1, wherein said group III-V semiconductor device comprises a high electron mobility transistor (HEMT).

9. The monolithic vertically integrated composite device of claim 1, wherein said group IV semiconductor device comprises a FETKY including a field-effect transistor (FET) and a Schottky diode.

5. The monolithic vertically integrated composite device of claim I, wherein said group IV semiconductor layer comprises silicon.

10. A monolithic vertically integrated composite device comprising:

a double sided semiconductor substrate having first and second sides;

a group IV semiconductor layer epitaxially grown over said first side and comprising at least one group IV semiconductor device;

a group III-V semiconductor body formed over said second side and comprising at least one group III-V semiconductor device; and

a substrate via electrically coupling said at least one group III-V semiconductor device to said at least one group IV semiconductor device.

11. The monolithic vertically integrated composite device of claim 10, further comprising a through-wafer via electrically coupling said at least one group III-V semiconductor device to said at least one group IV semiconductor device.