Transparent double-injection field-effect transistor

• US 7,915,651 B2
• Filed: 10/17/2006
• Issued: 03/29/2011
• Est. Priority Date: 02/07/2003
• Status: Active Grant

• Current Assignee: Hewlett-Packard Development Company, L.P. (HP Inc.)
• Original Assignee: Hewlett-Packard Development Company, L.P. (HP Inc.)
• Inventors: Hoffman, Randy
• Primary Examiner(s): Le; Thao X
• Assistant Examiner(s): Jones; Eric W
• Application Number:
  US11/582,010
• Publication Number:
  US 20070034915A1
• Time in Patent Office: 1,624 Days
• Field of Search: 257/288, 257/53, 257/57, 257/213, 257/214, 257/224, 257/249, 257/250, 257/291, 257/331, 257/368, 257/84
• US Class Current: 257/288
• CPC Class Codes: H01L 29/66969 of devices having semiconductor bodies not comprising group 14 or group 13/15 materials comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials, comprising cuprous oxide or cuprous iodide H01L21/02365
• CPC Class Codes: H01L 29/786 Thin film transistors, i.e. transistors with a channel being at least partly a thin film transistors having only the source or the drain region on an insulator layer H01L29/0653; thin film FinFETs H01L29/785
• CPC Class Codes: H01L 29/78645 with multiple gate
• CPC Class Codes: H01L 29/78648 arranged on opposing sides of the channel
• CPC Class Codes: H01L 29/78681 having a semiconductor body comprising AIIIBV or AIIBVI or AIVBVI semiconductor materials, or Se or Te
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
• CPC Class Codes: H01L 29/78696 characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel H01L29/78612 takes precedence; transistors having a drain offset region or a lightly doped drain [LDD] H01L29/78621

Abstract

A double-injection field-effect transistor has an anode, a cathode, a substantially transparent channel, a substantially transparent gate insulator, and at least one substantially transparent gate electrode. The transistor may also have a substantially transparent anode and/or cathode. The transistor may also be formed on a substantially transparent substrate. Electrode contacts and electrical interconnection leads may also be substantially transparent. Methods for making and using such double-injection field-effect transistors are also disclosed.

Claims

1. A field-effect transistor, comprising:

a) an anode;

b) a cathode spaced apart from the anode;

c) a substantially transparent channel adapted to selectively conduct carriers between the anode and the cathode;

d) at least one substantially transparent gate electrode adapted for controlling current in the channel; and

e) at least one substantially transparent gate insulator, only one of the anode and cathode being adapted to inject carriers into the channel.

2. An integrated circuit comprising the field-effect transistor of claim 1.

3. A substrate with microelectronics comprising the field-effect transistor of claim 1.

4. An electronic device comprising the field-effect transistor of claim 1.

5. A display comprising an array of pixel elements, each pixel element of the display comprising the field-effect transistor of claim 1.