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Transparent double-injection field-effect transistor

  • US 7,915,651 B2
  • Filed: 10/17/2006
  • Issued: 03/29/2011
  • Est. Priority Date: 02/07/2003
  • Status: Active Grant
First Claim
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1. A field-effect transistor, comprising:

  • a) an anode;

    b) a cathode spaced apart from the anode;

    c) a substantially transparent channel adapted to selectively conduct carriers between the anode and the cathode;

    d) at least one substantially transparent gate electrode adapted for controlling current in the channel; and

    e) at least one substantially transparent gate insulator, only one of the anode and cathode being adapted to inject carriers into the channel.

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