Switch circuit for high frequency signals wherein distortion of the signals are suppressed
First Claim
1. A high-frequency switch circuit for, in accordance with a high-level control signal voltage, allowing a high-frequency signal to pass through or cutting off the high-frequency signal, the switch circuit comprising:
- a switch section, including i) a field effect transistor configured to turn on and off in accordance with said high-level control signal voltage applied via a plurality of respective resistance elements, said switch section forming a passage route of said high-frequency signal, and ii) a plurality of bias circuits for applying different bias voltages that are lower than the high-level voltage of said control signal and that produce a potential difference between a drain terminal and a source terminal of said field effect transistor; and
a potential generating circuit for generating said bias voltages from said control signal voltage and supplying said bias voltages to said bias circuits.
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Accused Products
Abstract
A high-frequency switch circuit includes: a switch section comprised of a field effect transistor having a plurality of bias circuits and a potential generating circuit for generating bias voltages from a control signal and supplying them to the bias circuits. The field effect transistor forms the passage route of a high-frequency signal by turning on and off in accordance with the control signal. The bias circuits are provided to produce a potential difference between the drain terminal and the source terminal of the field effect transistor and to apply bias voltages lower than the voltage of the control signal to the drain terminal, and the source terminal.
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Citations
13 Claims
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1. A high-frequency switch circuit for, in accordance with a high-level control signal voltage, allowing a high-frequency signal to pass through or cutting off the high-frequency signal, the switch circuit comprising:
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a switch section, including i) a field effect transistor configured to turn on and off in accordance with said high-level control signal voltage applied via a plurality of respective resistance elements, said switch section forming a passage route of said high-frequency signal, and ii) a plurality of bias circuits for applying different bias voltages that are lower than the high-level voltage of said control signal and that produce a potential difference between a drain terminal and a source terminal of said field effect transistor; and a potential generating circuit for generating said bias voltages from said control signal voltage and supplying said bias voltages to said bias circuits. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13)
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Specification