Dynamic chip control

• US 7,917,772 B1
• Filed: 09/29/2006
• Issued: 03/29/2011
• Est. Priority Date: 09/29/2006
• Status: Active Grant

• Current Assignee: Intellectual Ventures Funding LLC (Intellectual Ventures LLC)
• Original Assignee: Intellectual Ventures Funding LLC (Intellectual Ventures LLC)
• Inventors: Hennecke, Mark, Koniaris, Kleanthes G., Burr, James B.
• Primary Examiner(s): Lee; Thomas
• Assistant Examiner(s): KINSEY, BRANDON MICHAEL
• Application Number:
  US11/529,865
• Time in Patent Office: 1,642 Days
• Field of Search: 713/300
• US Class Current: 713/300
• CPC Class Codes: G05B 13/026 using a predictor
• CPC Class Codes: G06F 1/206 comprising thermal management
• CPC Class Codes: G06F 1/3203 Power management, i.e. event-based initiation of a power-saving mode
• CPC Class Codes: G06F 1/324 by lowering clock frequency
• CPC Class Codes: G06F 1/3296 by lowering the supply or operating voltage
• CPC Class Codes: Y02D 10/00 Energy efficient computing, e.g. low power processors, power management or thermal management

Abstract

Methods and systems for operating a semiconductor device (e.g., a microprocessor) are described. The microprocessor is initially operated at a voltage and frequency that would be within operating limits at any device temperature. Using models that relate device temperature, operating limits and power consumption with voltage and frequency, the amount of supply voltage and a new operating frequency can be selected. The models are periodically consulted thereafter to continue adjusting the supply voltage and operating frequency, so that the microprocessor is caused to operate at very close to its capacity, in particular in those instances when, for example, processor-intensive instructions are being executed.

Claims

1. A method comprising:

accessing a temperature value corresponding to a temperature of a semiconductor device;

selecting a target operating frequency;

accessing a voltage value that corresponds to said temperature value and said target operating frequency;

predicting an amount of power that would be used by said semiconductor device at said temperature and voltage values;

comparing said amount of power to a specified power limit; and

adjusting said target operating frequency if said amount of power exceeds said specified power limit, wherein otherwise said semiconductor device is operable at said target operating frequency.

2. The method of claim 1 wherein said predicting comprises:

accessing a leakage power value that corresponds to an amount of leakage power at said temperature and voltage values;

accessing a dynamic power value that corresponds to an amount of dynamic power at said temperature and voltage values; and

summing said leakage power value and said dynamic power value to determine said amount of power.

3. The method of claim 1 further comprising comparing said voltage value to a voltage limit that corresponds to said temperature value, wherein said adjusting is also a result of said comparing of said voltage value and said voltage limit.

4. The method of claim 1 further comprising:

determining a predicted operating life for said semiconductor device if operated at said temperature and voltage values; and

comparing said predicted operating life to a design operating life for said semiconductor device.

5. The method of claim 1 wherein said adjusting further comprises selecting a different voltage value.

6. The method of claim 1 wherein said adjusting further comprises selecting a different temperature value.

28. The method of claim 4 further comprising determining an amount of divergence between said predicted operating life and said design operating life, wherein said adjusting is also to offset at least a portion of said amount of divergence.

7. A method comprising:

selecting a target operating frequency;

accessing a voltage value corresponding to said target operating frequency and to a temperature value, wherein said temperature value corresponds to a temperature of a semiconductor device;

predicting an amount of power that would be used by said semiconductor device at said temperature and voltage values;

comparing said amount of power to a specified power limit; and

adjusting said target operating frequency according to a result of said comparing, wherein said target operating frequency is changed if said amount of power exceeds said specified power limit and otherwise said semiconductor device is operable at said target operating frequency and at a voltage corresponding to said voltage value.

8. The method of claim 7 further comprising:

comparing said voltage value to a voltage limit that corresponds to said temperature value; and

adjusting at least one of said voltage and said temperature according to a result of said comparing of said voltage value and said voltage limit.

9. The method of claim 7 wherein said predicting comprises:

accessing a leakage power value that corresponds to an amount of leakage power at said temperature and voltage values;

accessing a dynamic power value that corresponds to an amount of dynamic power at said temperature and voltage values; and

summing said leakage power value and said dynamic power value to determine said amount of power.

10. The method of claim 7 wherein said adjusting further comprises selecting a different voltage value.

11. The method of claim 7 wherein said adjusting further comprises selecting a different temperature value.

12. The method of claim 7 further comprising:

determining a frequency limit using said voltage value and said temperature value, wherein said frequency limit is selected by comparing a predicted operating life for said semiconductor device if operated at said voltage value and said temperature value to a design operating life for said semiconductor device; and

selecting an operating frequency for said semiconductor device that does not exceed said frequency limit.

29. The method of claim 12 further comprising:

determining an amount of divergence between said predicted operating life and said design operating life; and

adjusting at least one of said voltage and said temperature to offset at least a portion of said amount of divergence.

13. A method comprising:

accessing a temperature value corresponding to a temperature of a semiconductor device;

accessing a voltage value that corresponds to said temperature value and to a target operating frequency;

accessing a specified power limit;

predicting an amount of power that would be used by said semiconductor device if said semiconductor device is operated at said temperature and voltage values; and

adjusting said target operating frequency if said amount of power exceeds said specified power limit, wherein otherwise said semiconductor device is operable at said target operating frequency and at a voltage corresponding to said voltage value.

14. The method of claim 13 further comprising:

accessing information that describes a frequency limit for said semiconductor device, wherein said frequency limit is selected by comparing a predicted operating life for said semiconductor device if operated at said temperature value to a design operating life for said semiconductor device; and

using said information to identify said voltage value, wherein said voltage value corresponds to an operating frequency for said semiconductor device that is less than said frequency limit.

15. The method of claim 13 wherein said predicting comprises:

accessing a leakage power value that corresponds to an amount of leakage power at said temperature and voltage values;

accessing a dynamic power value that corresponds to an amount of dynamic power at said operating frequency, said temperature value, and said voltage value; and

summing said leakage power value and said dynamic power value to determine said amount of power.

16. The method of claim 13 further comprising:

comparing said voltage value to a voltage limit that corresponds to said temperature; and

adjusting at least one of said temperature value and said voltage value according to a result of said comparing.

30. The method of claim 14 further comprising:

determining an amount of divergence between said predicted operating life and said design operating life; and

adjusting at least one of said supply voltage and said temperature to offset at least a portion of said amount of divergence.

17. A method comprising:

accessing a temperature value associated with a temperature of a semiconductor device;

accessing a power limit that limits an amount of power that can be used by said semiconductor device;

determining a ratio of a predicted operating life for said semiconductor device to a design operating life specified for said semiconductor device;

selecting a voltage value that specifies a voltage to be supplied to said semiconductor device, wherein said voltage value is selected according to said temperature value, said power limit, and said ratio;

predicting an amount of power that would be used by said semiconductor device at said temperature and voltage values;

comparing said amount of power to a specified power limit; and

adjusting an operating frequency of said semiconductor device according to a result of said comparing, wherein said operating frequency is changed if said amount of power exceeds said specified power limit and otherwise said semiconductor device is operable at said operating frequency and at a voltage corresponding to said voltage value.

18. The method of claim 17 wherein said predicting further comprises:

accessing a leakage power value that corresponds to an amount of leakage power at said temperature and voltage values;

accessing a dynamic power value that corresponds to an amount of dynamic power at said operating frequency, said temperature value, and said voltage value;

summing said leakage power value and said dynamic power value; and

comparing a result of said summing to said power limit.

19. The method of claim 17 further comprising determining an effect of said voltage on said design operating life.

20. The method of claim 17 further comprising changing said temperature.

21. The method of claim 17 further comprising:

changing said operating frequency to a different operating frequency; and

selecting a voltage value according to said different operating frequency, said temperature value, said power limit, and said ratio.

22. A computer system comprising:

memory; and

a processor coupled to said memory, wherein said computer system is configured to perform operations comprising;

accessing a temperature value corresponding to a temperature of a semiconductor device;

selecting a target operating frequency;

accessing a voltage value that corresponds to said temperature value and said target operating frequency;

predicting an amount of power that would be used by said semiconductor device at said temperature and voltage values;

comparing said amount of power to a specified power limit; and

adjusting said target operating frequency if said amount of power exceeds said specified power limit, wherein otherwise said semiconductor device is operable at said target operating frequency.

23. The computer system of claim 22 further configured to perform operations comprising:

accessing a leakage power value that corresponds to an amount of leakage power at said temperature and voltage values;

accessing a dynamic power value that corresponds to an amount of dynamic power at said temperature and voltage values; and

summing said leakage power value and said dynamic power value to determine said amount of power.

24. The computer system of claim 22 further configured to perform an operation comprising comparing said voltage value to a voltage limit that corresponds to said temperature value, wherein said adjusting is also a result of said comparing of said voltage value and said voltage limit.

25. The computer system of claim 22 further configured to perform an operation comprising:

determining a predicted operating life for said semiconductor device if operated at said temperature and voltage values; and

comparing said predicted operating life to a design operating life for said semiconductor device.

26. The computer system of claim 25 further configured to perform an operation comprising determining an amount of divergence between said predicted operating life and said design operating life, wherein said adjusting is also to offset at least a portion of said amount of divergence.

31. The computer system of claim 26 wherein said adjusting comprises an operation selected from the group consisting of:

reducing said voltage;

reducing said temperature; and

increasing said voltage.

27. A system comprising:

means for supplying an amount of voltage to a semiconductor device;

means for measuring a temperature value of said semiconductor device;

means for selecting a target operating frequency;

means for predicting an amount of power that would be used by said semiconductor device at said temperature and voltage values;

means for comparing said amount of power to a specified power limit; and

means for adjusting an operating frequency of said semiconductor device according to a result of said comparing, wherein said operating frequency is changed if said amount of power exceeds said specified power limit and otherwise said semiconductor device is operable at said operating frequency and at a voltage corresponding to said voltage value.