Electrode for use with double electric layer electrochemical capacitors having high specific parameters
First Claim
1. An electrode for use in a double electric layer electrochemical capacitor, the electrode based on porous non-metal conducting materials with p-type conductivity, comprising:
- an electrode material having a concentration of holes in its pore walls of not less than 1·
1019 per cm−
3;
an active electrode material containing impurity atoms that are acceptors and impurity atoms that are donors; and
a polymer binding material;
wherein the active material also includes intrinsic lattice defects that are acceptors.
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Accused Products
Abstract
The present invention relates to the production of electrochemical capacitors with a DEL. The proposed electrodes with DEL are based on non-metal conducting materials, including porous carbon materials, and are capable of providing for high specific energy, capacity and power parameters of electrochemical capacitors. P-type conductivity and high concentration of holes in electrode materials may be provided by thermal, ionic or electrochemical doping by acceptor impurities; irradiating by high-energy fast particles or quantums; or chemical, electrochemical and/or thermal treatment. The present invention allows for an increase in specific energy, capacity and power parameters, as well as a reduction in the cost of various electrochemical capacitors with DEL. The proposed electrodes with DEL can be used as positive and/or negative electrodes of symmetric and asymmetric electrochemical capacitors with aqueous and non-aqueous electrolytes.
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Citations
23 Claims
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1. An electrode for use in a double electric layer electrochemical capacitor, the electrode based on porous non-metal conducting materials with p-type conductivity, comprising:
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an electrode material having a concentration of holes in its pore walls of not less than 1·
1019 per cm−
3;an active electrode material containing impurity atoms that are acceptors and impurity atoms that are donors; and a polymer binding material; wherein the active material also includes intrinsic lattice defects that are acceptors. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13)
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14. An electrode for use in a double electric layer electrochemical capacitor, the electrode based on porous non-metal conducting materials with p-type conductivity, comprising:
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an electrode material having a concentration of holes in its pore walls of not less than 1·
1019 per cm−
3 and a specific area of between about 600 to about 2,500 m2/g;a polymer binder; and an active electrode material doped at least with Boron; wherein the active material also includes intrinsic lattice defects that are acceptors. - View Dependent Claims (15, 16, 17, 18, 19)
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20. An electrode for use in a double electric layer electrochemical capacitor, the electrode based on porous non-metal conducting materials with p-type conductivity, comprising:
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an electrode material having a concentration of holes in its pore walls of not less than 1·
1019 per cm−
3 and a specific area of between about 600 to about 2,500 m2/g;a polymer binder; and an active electrode material doped with a dopant selected from the group consisting of Boron, Nitrogen, Phosphorus, Silicon, and various combinations thereof; wherein the active material also includes intrinsic lattice defects that are acceptors. - View Dependent Claims (21)
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22. An electrode for use in a double electric layer electrochemical capacitor, the electrode based on porous non-metal conducting materials with p-type conductivity, comprising:
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an electrode material having a concentration of holes in its pore walls of not less than 1·
1019 per cm−
3 and a specific surface area in the range of about 600 to about 2,500 m2/g; andan active electrode material containing impurity atoms that are acceptors and impurity atoms that are donors; wherein the active material also includes intrinsic lattice defects that are acceptors.
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23. An electrode for use in a double electric layer electrochemical capacitor, the electrode based on porous non-metal conducting materials with p-type conductivity, comprising:
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an electrode material having a concentration of holes in its pore walls of not less than 1·
1019 per cm−
3, said electrode material containing a dopant selected from the group consisting of boron in an amount of about 0.08 to about 2.5%, nitrogen in an amount of about 0.1 to about 5.0%, and silicon in an amount of about 0.001 to about 0.2%; andan active electrode material containing impurity atoms that are acceptors and impurity atoms that are donors; wherein the active material also includes intrinsic lattice defects that are acceptors.
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Specification