Atomic layer deposition apparatus using neutral beam and method of depositing atomic layer using the same

• US 7,919,142 B2
• Filed: 02/07/2006
• Issued: 04/05/2011
• Est. Priority Date: 03/22/2005
• Status: Active Grant

• Current Assignee: Sungkyunkwan University Foundation For Corporate Collaboration (SungKyunKwan University (SKKU))
• Original Assignee: Sungkyunkwan University Foundation For Corporate Collaboration (SungKyunKwan University (SKKU))
• Inventors: Ahn, Kyeong-Joon, Yeom, Geun-Young, Lee, Do-Haing, Park, Byoung-Jae
• Primary Examiner(s): Meeks; Timothy H
• Assistant Examiner(s): Gambetta; Kelly M
• Application Number:
  US11/348,471
• Publication Number:
  US 20060213443A1
• Time in Patent Office: 1,883 Days
• Field of Search: 427/248.1, 427/595, 427/596
• US Class Current: 427/248.1
• CPC Class Codes: C23C 16/452 by activating reactive gas streams before their introduction into the reaction chamber, e.g. by ionisation or addition of reactive species
• CPC Class Codes: C23C 16/4551 Jet streams
• CPC Class Codes: C23C 16/45536 Use of plasma, radiation or electromagnetic fields
• CPC Class Codes: C23C 16/45544 characterized by the apparatus

Abstract

Disclosed are an atomic layer deposition apparatus using a neutral beam and a method of depositing an atomic layer using the apparatus, capable of converting an ion beam into a neutral beam and radiating it onto a substrate to be treated. The method uses an apparatus for supplying a first reaction gas containing a material that cannot be chemisorbed onto a substrate to be treated into a reaction chamber in which the substrate is loaded, and forming a first reactant adsorption layer containing a material that cannot be chemisorbed onto the substrate; and radiating a neutral beam generated by the second reaction gas onto the substrate on which the first reactant adsorption layer is formed, and removing a material not chemisorbed onto the substrate from the first reactant adsorption layer to form a second reactant adsorption layer. It is possible to perform a process without damage due to charging with the apparatus for depositing an atomic layer using a neutral beam and the method of depositing an atomic layer using the apparatus.

Claims

1. A method of depositing an atomic layer using a neutral beam, the method comprising:

supplying a first reaction gas containing a material that cannot be chemisorbed onto a substrate to be treated into a reaction chamber in which the substrate is loaded, and forming a first reactant adsorption layer containing the material that cannot be chemisorbed onto the substrate; and

radiating a neutral beam generated by a second reaction gas onto the substrate on which the first reactant adsorption layer is formed, and removing the material not chemisorbed onto the substrate from the first reactant adsorption layer to form a second reactant adsorption layer.

2. The method of depositing an atomic layer using a neutral beam according to claim 1, wherein the neutral beam is generated by reflecting an energetic ion beam from a reflective body.

3. The method of depositing an atomic layer using a neutral beam according to claim 1, further comprising, after at least one of forming the first reactant adsorption layer or forming the second reactant adsorption layer, injecting an inert gas into the reaction chamber to purge the reaction chamber of byproducts generated during formation of the first and second reactant adsorption layers.

4. The method of depositing an atomic layer using a neutral beam according to claim 1, wherein the first reaction gas injected during the formation of the first reactant adsorption layer is a gas of a metal-halogen element.

5. The method of depositing an atomic layer using a neutral beam according to claim 1, wherein the second reaction gas is any one selected from hydrogen, oxygen, nitrogen, and a NH-based gas such as ammonia.

6. The method of depositing an atomic layer using a neutral beam according to claim 5, wherein the neutral beam radiated onto the substrate during the formation of the second reactant adsorption layer ionizes hydrogen, oxygen, nitrogen, and a NH-based gas such as ammonia using an ion source to form an ion beam, and the ion beam is converted into the neutral beam by reflection from a reflective body.

7. The method of depositing an atomic layer using a neutral beam according to claim 3, wherein the inert gas injected to purge the reaction chamber is one of argon, nitrogen, and helium.

8. The method of depositing an atomic layer using a neutral beam according to claim 3, wherein the formation of the first reactant adsorption layer, the purging of the reaction chamber of byproducts, the formation of the second reactant adsorption layer, and the purging of the reaction chamber of byproducts are repeated as one cycle.

9. A method of depositing an atomic layer using a neutral beam that enables deposition of a single atomic layer containing Si, nitride, metal oxide, or a metal layer, the method comprising:

supplying a first reaction gas containing a material that cannot be chemisorbed onto a substrate to be treated into a reaction chamber in which the substrate is loaded, and forming a first reactant adsorption layer containing the material that cannot be chemisorbed onto the substrate; and

radiating a neutral beam generated by a second reaction gas onto the substrate on which the first reactant adsorption layer is formed, and removing the material not chemisorbed onto the substrate from the first reactant adsorption layer to form a second reactant adsorption layer.