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Semiconductor device and manufacturing method thereof

  • US 7,919,353 B2
  • Filed: 08/22/2007
  • Issued: 04/05/2011
  • Est. Priority Date: 09/11/2006
  • Status: Active Grant
First Claim
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1. A method of manufacturing a semiconductor device, comprising:

  • providing a semiconductor substrate comprising a device component formed on a top surface of the semiconductor substrate;

    bonding a supporting member to the top surface of the semiconductor substrate;

    removing part of the semiconductor substrate to form a dent so as to expose bump electrode forming regions;

    forming an isolation layer in the dent so that each of the bump electrode forming regions is surrounded in plan view of the semiconductor device by a side surface of the dent and the isolation layer, the isolation layer being foamed away from the side surface of the dent so as to leave space for the bump electrode forming regions between the isolation layer and the side surface of the dent; and

    forming a bump electrode in each of the bump electrode forming regions.

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