Semiconductor device and manufacturing method thereof

• US 7,919,353 B2
• Filed: 08/22/2007
• Issued: 04/05/2011
• Est. Priority Date: 09/11/2006
• Status: Active Grant

• Current Assignee: Semiconductor Components Industries LLC (ON Semiconductor Corporation)
• Original Assignee: Sanyo Semiconductor Company Limited (ON Semiconductor Corporation), Sanyo Electric Company Limited (Panasonic Holdings Corporation)
• Inventors: Morita, Yuichi, Noma, Takashi
• Primary Examiner(s): Smith; Matthew S
• Assistant Examiner(s): Enad; Christine
• Application Number:
  US12/440,864
• Publication Number:
  US 20100038742A1
• Time in Patent Office: 1,322 Days
• Field of Search: 438/106, 438/613, 257/690, 257/737, 257/E23.033, 257/E23.021, 257/E23.068
• US Class Current: 438/106
• CPC Class Codes: H01L 21/4853 Connection or disconnection of other leads to or from a metallisation, e.g. pins, wires, bumps
• CPC Class Codes: H01L 2224/11 Manufacturing methods

Abstract

This invention is directed to offer a technology that makes it possible to form desired bump electrodes easily when the bump electrodes are to be formed at locations lowered by a step. There is formed an isolation layer 12 to isolate each of bump electrode forming regions 11. The isolation layer 12 is a resist layer, for example, and is formed by exposure and development processes, for example. Each of the bump electrode forming regions 11 is surrounded by the isolation layer 12 and a protection layer 10 that covers a side surface of a semiconductor substrate 2. Then, a printing mask 16 that has openings 15 at locations corresponding to the bump electrode forming regions 11 is placed above the semiconductor substrate 2. Next, solder 17 in paste form is applied to the printing mask 16. Then the solder 17 is applied to a metal layer 9 by moving a squeeze 18 at a constant speed. Bump electrodes 19 are obtained by heating, melting and re-crystallizing the solder 17 after removing the printing mask 16.

Claims

1. A method of manufacturing a semiconductor device, comprising:

providing a semiconductor substrate comprising a device component formed on a top surface of the semiconductor substrate;

bonding a supporting member to the top surface of the semiconductor substrate;

removing part of the semiconductor substrate to form a dent so as to expose bump electrode forming regions;

forming an isolation layer in the dent so that each of the bump electrode forming regions is surrounded in plan view of the semiconductor device by a side surface of the dent and the isolation layer, the isolation layer being foamed away from the side surface of the dent so as to leave space for the bump electrode forming regions between the isolation layer and the side surface of the dent; and

forming a bump electrode in each of the bump electrode forming regions.

2. The method of claim 1, wherein the isolation layer comprises a resin, and the forming of the isolation layer comprises patterning of a layer made of the resin by photolithography or dispensing of a layer made of the resin.

3. The method of claim 1, wherein the forming of the bump electrode comprises using a printing mask that has openings corresponding to the bump electrode forming regions.

4. The method of claim 1, wherein the forming of the bump electrode comprises applying a conductive material to the bump electrode forming regions and moving a squeegee without using a printing mask.

5. The method of claim 1, wherein the forming of the bump electrode comprises applying a conductive material to the bump electrode forming regions by a dispense method.

6. A method of manufacturing a semiconductor device, comprising:

providing a semiconductor substrate comprising a device component formed on a top surface of the semiconductor substrate;

bonding a supporting member to the top surface of the semiconductor substrate;

removing part of the supporting member to form a dent so as to expose bump electrode forming regions;

forming an isolation layer in the dent so that each of the bump electrode forming regions is surrounded in plan view of the semiconductor device by a side surface of the dent and the isolation layer, the isolation layer being formed away from the side surface of the dent so as to leave space for the bump electrode forming regions between the isolation layer and the side surface of the dent; and

forming a bump electrode in each of the bump electrode forming regions.

7. The method of claim 6, wherein the isolation layer comprises a resin, and the forming of the isolation layer comprises patterning of a layer made of the resin by photolithography or dispensing of a layer made of the resin.

8. The method of claim 6, wherein the forming of the bump electrode comprises using a printing mask that has openings corresponding to the bump electrode forming regions.

9. The method of claim 6, wherein the forming of the bump electrode comprises applying a conductive material to the bump electrode forming regions and moving a squeegee without using a printing mask.

10. The method of claim 6, wherein the forming of the bump electrode comprises applying a conductive material to the bump electrode forming regions by a dispense method.

11. A semiconductor device comprising:

a semiconductor substrate comprising a device component formed on a top surface of the semiconductor substrate;

a pad electrode electrically connected to the device component and disposed at a bottom of a dent portion;

a bump electrode formed on the pad electrode; and

an isolation layer disposed in the dent portion so that the bump electrode is surrounded in plan view of the semiconductor device by a side surface of the dent portion and the isolation layer, the isolation layer being away from the side surface of the dent so as to leave space for the bump electrode between the isolation layer and the side surface of the dent.