Semiconductor device and method of manufacturing the same
First Claim
1. A method of manufacturing a semiconductor device, the method comprising:
- bonding a single-crystal silicon substrate with an insulating substrate having a surface on which an SiO2 film is formed, wherein the single-crystal silicon substrate includes a porous silicon layer and a single-crystal silicon thin film formed on the porous silicon layer and has a surface which is on a single-crystal silicon thin film side with respect to the porous silicon layer and on which an SiO2 film is formed, a gate insulating film and a gate electrode are formed between the single-crystal silicon thin film and the SiO2 film on the single-crystal silicon substrate, and the surface of the insulating substrate, where the SiO2 film is formed, is bonded with the surface of the single-crystal silicon substrate, where the SiO2 film is formed, andseparating a part of the single-crystal silicon substrate at the porous silicon layer, and removing the porous silicon layer from a remaining part of the single-crystal silicon substrate, the remaining part still being on the insulating substrate after the part is separated.
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Abstract
On an SOI substrate, a hydrogen ion implantation section in which distribution of hydrogen ions peaks in a BOX layer (buried oxide film layer), and a single-crystal silicon thin-film transistor are formed. Then this SOI substrate is bonded with an insulating substrate. Subsequently, the SOI substrate is cleaved at the hydrogen ion implantation section by carrying out heat treatment, so that an unnecessary part of the SOI substrate is removed, Furthermore, the BOX layer remaining on the single-crystal silicon thin-film transistor is removed by etching. With this, it is possible to from a single-crystal silicon thin-film device on an insulating substrate, without using an adhesive. Moreover, it is possible to provide a semiconductor device which has no surface damage and includes a single-crystal silicon thin film which is thin and uniform in thickness.
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Citations
18 Claims
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1. A method of manufacturing a semiconductor device, the method comprising:
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bonding a single-crystal silicon substrate with an insulating substrate having a surface on which an SiO2 film is formed, wherein the single-crystal silicon substrate includes a porous silicon layer and a single-crystal silicon thin film formed on the porous silicon layer and has a surface which is on a single-crystal silicon thin film side with respect to the porous silicon layer and on which an SiO2 film is formed, a gate insulating film and a gate electrode are formed between the single-crystal silicon thin film and the SiO2 film on the single-crystal silicon substrate, and the surface of the insulating substrate, where the SiO2 film is formed, is bonded with the surface of the single-crystal silicon substrate, where the SiO2 film is formed, and separating a part of the single-crystal silicon substrate at the porous silicon layer, and removing the porous silicon layer from a remaining part of the single-crystal silicon substrate, the remaining part still being on the insulating substrate after the part is separated. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18)
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Specification