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Over-passivation process of forming polymer layer over IC chip

  • US 7,919,412 B2
  • Filed: 11/19/2008
  • Issued: 04/05/2011
  • Est. Priority Date: 07/16/2004
  • Status: Expired due to Fees
First Claim
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1. A method for forming a semiconductor chip, comprising:

  • providing a silicon substrate, a first circuit layer over said silicon substrate, a second circuit layer over said silicon substrate and said first circuit layer, a dielectric layer between said first and second circuit layers, and a passivation layer over said silicon substrate, said first and second circuit layers and said dielectric layer, wherein said passivation layer comprises a nitride layer;

    forming a metal layer over said passivation layer;

    forming a photoresist layer on said metal layer, wherein an opening in said photoresist layer exposes a region of said metal layer;

    after said forming said photoresist layer, electroplating a copper layer on said region;

    after said electroplating said copper layer, removing said photoresist layer;

    after said removing said photoresist layer, removing said metal layer not under said copper layer;

    after said removing said metal layer not under said copper layer, forming a first polyimide layer over said copper layer; and

    curing said first polyimide layer with a temperature profile having a peak temperature between 200 and 320 degrees Celsius.

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