Over-passivation process of forming polymer layer over IC chip

• US 7,919,412 B2
• Filed: 11/19/2008
• Issued: 04/05/2011
• Est. Priority Date: 07/16/2004
• Status: Expired due to Fees

• Current Assignee: Qualcomm, Inc.
• Original Assignee: Megica Corporation (Chipbond Technology Corporation)
• Inventors: Chen, Ying-Chih, Lin, Mou-Shiung, Chou, Chiu-Ming
• Primary Examiner(s): Le; Thao P.
• Application Number:
  US12/273,546
• Publication Number:
  US 20090111261A1
• Time in Patent Office: 867 Days
• Field of Search: 438/622, 257/E21.495
• US Class Current: 438/678
• CPC Class Codes: H01L 21/02118 carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC polymers per se C08G, photoresist per se G03F
• CPC Class Codes: H01L 21/02337 treatment by exposure to a gas or vapour
• CPC Class Codes: H01L 21/312 Organic layers, e.g. photoresist H01L21/3105, H01L21/32 take precedence; photoresists per se G03C
• CPC Class Codes: H01L 23/29 characterised by the material , e.g. carbon interlayer dielectrics H01L23/5329
• CPC Class Codes: H01L 23/3114 the device being a chip scale package, e.g. CSP
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: H01L 2924/12044 OLED

Abstract

A method for forming a semiconductor chip or wafer includes following steps. A semiconductor substrate is provided, and then a polymer layer is deposited over the semiconductor substrate, wherein the polymer layer comprises polyimide. The polymer layer with a temperature profile having a peak temperature between 200 and 320 degrees Celsius. Alternatively, the temperature profile may comprises a period of time with a temperature higher than 320 degree Celsius, wherein the period of time is shorter than 45 minutes.

Claims

1. A method for forming a semiconductor chip, comprising:

providing a silicon substrate, a first circuit layer over said silicon substrate, a second circuit layer over said silicon substrate and said first circuit layer, a dielectric layer between said first and second circuit layers, and a passivation layer over said silicon substrate, said first and second circuit layers and said dielectric layer, wherein said passivation layer comprises a nitride layer;

forming a metal layer over said passivation layer;

forming a photoresist layer on said metal layer, wherein an opening in said photoresist layer exposes a region of said metal layer;

after said forming said photoresist layer, electroplating a copper layer on said region;

after said electroplating said copper layer, removing said photoresist layer;

after said removing said photoresist layer, removing said metal layer not under said copper layer;

after said removing said metal layer not under said copper layer, forming a first polyimide layer over said copper layer; and

curing said first polyimide layer with a temperature profile having a peak temperature between 200 and 320 degrees Celsius.

2. The method of claim 1, wherein said forming said metal layer comprises sputtering a titanium-containing layer over said passivation layer.

3. The method of claim 1, further comprising said curing said first polyimide layer in an ambient comprising nitrogen.

4. The method of claim 1, further comprising said curing said first polyimide layer in an ambient comprising less than 500 ppm oxygen.

5. The method of claim 1, further comprising said curing said first polyimide layer in an ambient comprising hydrogen.

6. The method of claim 1, wherein said curing said first polyimide layer is performed at said peak temperature within 10 degrees Celsius deviation for longer than 20 minutes.

7. The method of claim 1, further comprising said curing said first polyimide layer with said temperature profile having said peak temperature between 240 and 300 degrees Celsius.

8. The method of claim 1 further comprising forming a second polyimide layer on said passivation layer, followed by said forming said metal layer further on said second polyimide layer.

9. The method of claim 1 further comprising providing a poly-to-poly capacitor in or on said silicon substrate.

10. The method of claim 1 further comprising said electroplating said copper layer to a thickness between 2 and 30 micrometers.

11. The method of claim 1, wherein said nitride layer has a thickness between 0.2 and 1.2 micrometers.

12. A method for forming a semiconductor chip, comprising:

providing a silicon substrate, a first circuit layer over said silicon substrate, a second circuit layer over said silicon substrate and said first circuit layer, a dielectric layer between said first and second circuit layers, a metal pad over said silicon substrate, and a passivation layer over said silicon substrate, said first and second circuit layers and said dielectric layer, wherein said passivation layer comprises a nitride layer, wherein an opening in said passivation layer is over a contact point of said metal pad, and said contact point is at a bottom of said opening in said passivation layer;

forming a metal layer on said contact point and over said passivation layer;

forming a photoresist layer on said metal layer, wherein an opening in said photoresist layer exposes a region of said metal layer;

after said forming said photoresist layer, electroplating a copper layer on said region;

forming a nickel layer on said copper layer;

after said forming said nickel layer, removing said photoresist layer;

after said removing said photoresist layer, removing said metal layer not under said copper layer;

after said removing said metal layer not under said copper layer, forming a polyimide layer over said nickel layer; and

curing said polyimide layer with a temperature profile having a peak temperature between 200 and 320 degrees Celsius.

13. The method of claim 12 further comprising said curing said polyimide layer with said temperature profile having said peak temperature between 240 and 300 degrees Celsius.

14. The method of claim 12 further comprising said forming said nickel layer to a thickness greater than 1 micrometer.

15. The method of claim 12, wherein said forming said nickel layer comprises an electroplating process.

16. The method of claim 12, wherein said nitride layer has a thickness between 0.2 and 1.2 micrometers.

17. A method for forming a semiconductor chip, comprising:

providing a silicon substrate, a first circuit layer over said silicon substrate, a second circuit layer over said silicon substrate and said first circuit layer, a dielectric layer between said first and second circuit layers, a metal pad over said silicon substrate, and a passivation layer over said silicon substrate, said first and second circuit layers and said dielectric layer, wherein said passivation layer comprises a nitride layer, wherein an opening in said passivation layer is over a contact point of said metal pad, and said contact point is at a bottom of said opening in said passivation layer;

forming a metal layer on said contact point and over said passivation layer;

forming a photoresist layer on said metal layer, wherein an opening in said photoresist layer exposes a region of said metal layer;

after said forming said photoresist layer, electroplating a copper layer on said region;

forming a nickel layer on said copper layer;

forming a gold layer over said nickel layer;

after said forming said gold layer, removing said photoresist layer;

after said removing said photoresist layer, removing said metal layer not under said copper layer;

after said removing said metal layer not under said copper layer, forming a polyimide layer over said gold layer; and

curing said polyimide layer with a temperature profile having a peak temperature between 200 and 320 degrees Celsius.

18. The method of claim 17 further comprising said curing said polyimide layer with said temperature profile having said peak temperature between 240 and 300 degrees Celsius.

19. The method of claim 17 further comprising said forming said gold layer to a thickness between 10 and 2000 angstroms.

20. The method of claim 17, wherein said nitride layer has a thickness between 0.2 and 1.2 micrometers.