Post passivation interconnection schemes on top of IC chip
First Claim
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1. A chip comprising:
- a silicon substrate;
a first internal circuit in or on said silicon substrate;
a second internal circuit in or on said silicon substrate;
a third internal circuit in or on said silicon substrate;
a dielectric layer over said silicon substrate;
a first interconnecting structure over said silicon substrate and in said dielectric layer, wherein said first interconnecting structure is connected to said first internal circuit and to said second internal circuit, wherein said first internal circuit is connected to said second internal circuit through said first interconnecting structure;
a second interconnecting structure over said silicon substrate and in said dielectric layer, wherein said second interconnecting structure is connected to said third internal circuit;
a passivation layer over said dielectric layer;
a first via in said passivation layer, wherein said first via is connected to said first interconnecting structure;
a second via in said passivation layer, wherein said second via is connected to said second interconnecting structure; and
a third interconnecting structure over said passivation layer, wherein said third interconnecting structure is connected to said first and second vias, wherein said first internal circuit is connected to said third internal circuit through, in sequence, said first interconnecting structure, said first via, said third interconnecting structure, said second via and said second interconnecting structure, and wherein said second internal circuit is connected to said third internal circuit through, in sequence, said first interconnecting structure, said first via, said third interconnecting structure, said second via and said second interconnecting structure.
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Abstract
A new method is provided for the creation of interconnect lines. Fine line interconnects are provided in a first layer of dielectric overlying semiconductor circuits that have been created in or on the surface of a substrate. A layer of passivation is deposited over the layer of dielectric, a thick second layer of dielectric is created over the surface of the layer of passivation. Thick and wide interconnect lines are created in the thick second layer of dielectric. The first layer of dielectric may also be eliminated, creating the wide thick interconnect network on the surface of the layer of passivation that has been deposited over the surface of a substrate.
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Citations
20 Claims
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1. A chip comprising:
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a silicon substrate; a first internal circuit in or on said silicon substrate; a second internal circuit in or on said silicon substrate; a third internal circuit in or on said silicon substrate; a dielectric layer over said silicon substrate; a first interconnecting structure over said silicon substrate and in said dielectric layer, wherein said first interconnecting structure is connected to said first internal circuit and to said second internal circuit, wherein said first internal circuit is connected to said second internal circuit through said first interconnecting structure; a second interconnecting structure over said silicon substrate and in said dielectric layer, wherein said second interconnecting structure is connected to said third internal circuit; a passivation layer over said dielectric layer; a first via in said passivation layer, wherein said first via is connected to said first interconnecting structure; a second via in said passivation layer, wherein said second via is connected to said second interconnecting structure; and a third interconnecting structure over said passivation layer, wherein said third interconnecting structure is connected to said first and second vias, wherein said first internal circuit is connected to said third internal circuit through, in sequence, said first interconnecting structure, said first via, said third interconnecting structure, said second via and said second interconnecting structure, and wherein said second internal circuit is connected to said third internal circuit through, in sequence, said first interconnecting structure, said first via, said third interconnecting structure, said second via and said second interconnecting structure. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
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12. A chip comprising:
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a silicon substrate; a first internal circuit in or on said silicon substrate; a second internal circuit in or on said silicon substrate; a third internal circuit in or on said silicon substrate; a fourth internal circuit in or on said silicon substrate; a dielectric layer over said silicon substrate; a first interconnecting structure over said silicon substrate and in said dielectric layer, wherein said first interconnecting structure is connected to said first internal circuit and to said second internal circuit, wherein said first internal circuit is connected to said second internal circuit through said first interconnecting structure; a second interconnecting structure over said silicon substrate and in said dielectric layer, wherein said second interconnecting structure is connected to said third internal circuit and to said fourth internal circuit, wherein said third internal circuit is connected to said fourth internal circuit through said second interconnecting structure; a passivation layer over said dielectric layer, wherein said passivation layer comprises a nitride layer; a first via in said passivation layer, wherein said first via is connected to said first interconnecting structure; a second via in said passivation layer, wherein said second via is connected to said second interconnecting structure; and a third interconnecting structure over said passivation layer, wherein said third interconnecting structure is connected to said first and second vias, wherein said first internal circuit is connected to said third internal circuit through, in sequence, said first interconnecting structure, said first via, said third interconnecting structure, said second via and said second interconnecting structure, wherein said second internal circuit is connected to said third internal circuit through, in sequence, said first interconnecting structure, said first via, said third interconnecting structure, said second via and said second interconnecting structure, wherein said first internal circuit is connected to said fourth internal circuit through, in sequence, said first interconnecting structure, said first via, said third interconnecting structure, said second via and said second interconnecting structure, and wherein said second internal circuit is connected to said fourth internal circuit through, in sequence, said first interconnecting structure, said first via, said third interconnecting structure, said second via and said second interconnecting structure. - View Dependent Claims (13, 14, 15, 16, 17, 18, 19, 20)
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Specification