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Light-emitting device and electronic apparatus

  • US 7,919,916 B2
  • Filed: 08/18/2008
  • Issued: 04/05/2011
  • Est. Priority Date: 09/18/2007
  • Status: Active Grant
First Claim
Patent Images

1. A light-emitting device comprising:

  • a light-emitting element having a substrate, a first electrode layer, a translucent semi-reflective layer, and a light-emitting functional layer disposed between the first electrode and the translucent semi-reflective layer;

    a reflective layer between the substrate and the first electrode; and

    a color filter which is disposed at the opposite side of the light-emitting functional layer with the translucent semi-reflective layer therebetween and transmits light which passed through out the translucent reflective layer,wherein an optical path d1 which is a way from the reflective layer to the translucent semi-reflective layer is a value between d1a calculated by expression 1 and d1b calculated by expression 2,wherein d1a=(p+1/2)·

    λ

    /2−



    1

    φ

    2

    λ

    /4π



    nz·

    tz (expression

         1), and d1b=m·

    λ

    /2+(φ

    3

    2

    λ

    /4π

    (Expression

         2), wherein λ

    is a wavelength at a peak transmittance of the color filter, φ

    1 is a phase change when light of a wavelength λ

    , which advances toward the translucent semi-reflective layer from the opposite side of the light-emitting functional layer, reflects from an interface of the translucent semi-reflective layer, which is at the opposite side of the light-emitting functional layer, φ

    2 is a phase change when the light of a wavelength λ

    , which advances toward the reflective layer from the light-emitting functional layer, reflects from the reflective layer, and φ

    3 is a phase change when the light of a wavelength λ

    , which advances toward the translucent semi-reflective layer from the light-emitting functional layer, reflects from the interface of the translucent semi-reflective layer which is at the opposite side of light-emitting functional layer side wherein p is a positive integer, m is a positive integer, nz is a reflectance of the translucent semi-reflective layer with respect to the light of a wavelength λ and

    tz is a thickness of the translucent semi-reflective layer.

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