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Light emitting semiconductor device having an electrical confinement barrier near the active region

  • US 7,920,612 B2
  • Filed: 07/31/2006
  • Issued: 04/05/2011
  • Est. Priority Date: 08/31/2004
  • Status: Active Grant
First Claim
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1. A light emitting semiconductor device comprising a III-V semiconductor material and having improved electrical confinement in the active region, comprising:

  • an active region;

    an electrical confining layer positioned adjacent the active region, the confining layer comprising;

    a spacer layer comprising aluminum;

    a confinement barrier positioned between the spacer layer and the active region and having a thickness that is in a range from 2 nm to 50 nm, the confinement barrier having an aluminum content greater than that of the spacer layer, thereby creating a spike in the aluminum content near the active region, wherein the electrical confining layer comprises a dopant increase in the confinement barrier, the spacer layer comprising a direct bandgap material having an aluminum content of less than 45% and wherein the confinement barrier has an aluminum content greater than 60%.

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