Method for growing single crystals of metals

• US 7,922,812 B2
• Filed: 11/08/2007
• Issued: 04/12/2011
• Est. Priority Date: 05/12/2005
• Status: Active Grant

• Current Assignee: Intellectual Ventures Holding 40 LLC (Intellectual Ventures LLC)
• Original Assignee: Intellectual Ventures Holding 40 LLC (Intellectual Ventures LLC)
• Inventors: Taleff, Eric M., Ciulik, James R.
• Primary Examiner(s): Kunemund; Robert M
• Application Number:
  US11/936,954
• Publication Number:
  US 20090120351A1
• Time in Patent Office: 1,251 Days
• Field of Search: 117/7
• US Class Current: 117/7
• CPC Class Codes: C30B 1/02 by thermal treatment, e.g. strain annealing C30B1/12 takes precedence
• CPC Class Codes: C30B 1/04 Isothermal recrystallisation
• CPC Class Codes: C30B 29/02 Elements
• CPC Class Codes: Y10T 117/10 Apparatus

Abstract

A method for growing large single crystals of metals is disclosed. A polycrystalline form of a metal specimen is initially heated in a non-oxidizing environment. A minimum plastic strain is then applied to the heated metal specimen to initiate the growth of a selected grain within the heated metal specimen. Additional plastic strain is subsequently applied to the heated metal specimen to propagate the growth of the selected grain to become a large single crystal.

Claims

1. A method for growing a single-crystal metal, the method comprising:

heating a polycrystalline metal specimen in a non-oxidizing environment;

applying a first plastic strain to the heated polycrystalline metal specimen to initiate growth of a grain of the heated polycrystalline metal specimen by displacing distal ends of the heated polycrystalline metal specimen; and

applying a second plastic strain to the heated polycrystalline metal specimen to propagate growth of the grain to form a single-crystal metal by displacing a first distal end of the heated polycrystalline metal specimen at a faster rate than a second distal end of the heated polycrystalline metal specimen.

2. The method of claim 1, wherein the polycrystalline metal specimen comprises a refractory metal selected from the group consisting of molybdenum, tungsten, niobium, and tantalum.

3. The method of claim 1, wherein the polycrystalline metal specimen comprises a refractory metal with alloying additions.

4. The method of claim 1, wherein the non-oxidizing environment comprises vacuum, inert gas, or a reducing atmosphere.

5. The method of claim 1, wherein said heating is provided by an external heat source via radiation, conduction, or convection.

6. The method of claim 1, wherein said heating is provided via radiant heating by infra-red lamps, inductive heating, or direct resistance heating by passing an electric current through the metal specimen.

7. The method of claim 1, wherein said heating comprises heating the polycrystalline metal specimen between approximately 0.55 and 0.8 T_m, where T_m is a melting temperature of the polycrystalline metal specimen.

8. The method of claim 1, wherein at least one of the first plastic strain and the second plastic strain is in tension, compression, shear, or a combination thereof.

9. The method of claim 1, wherein the grain is selected from the group consisting of a recrystallized microstructure, a textured microstructure, and a seed crystal.

10. The method of claim 1, further comprising passing the polycrystalline metal specimen through a heated zone or passing a heated zone along the polycrystalline metal specimen during said applying a first plastic strain and said applying a second plastic strain to produce the single crystal metal in a continuous manner.

11. The method of claim 1, wherein the polycrystalline metal specimen comprises molybdenum and wherein the first plastic strain is greater than 4% at a temperature between 1400°

C. and 1800°

C.

12. The method of claim 1, wherein said applying a first plastic strain comprises displacing the first distal end of the heated polycrystalline metal specimen at a faster rate than the second distal end of the heated polycrystalline metal specimen.

13. The method of claim 1, wherein the growth of the grain to form the single-crystal metal is propagated from the first distal end of the heated polycrystalline metal specimen to the second distal end of the heated polycrystalline metal specimen.

14. The method of claim 1, wherein the growth consumes the polycrystalline metal specimen to form the single-crystal metal.

15. The method of claim 1, wherein the first plastic strain is between 4% and 40%.

16. The method of claim 1, wherein a true-strain rate of the second plastic strain is between 10⁻

5 s<sup>−

1</sup> and 10<sup>−

1</sup> s<sup>−

1</sup>.