Multi-focus method of enhanced three-dimensional exposure of resist

• US 7,923,182 B2
• Filed: 10/22/2009
• Issued: 04/12/2011
• Est. Priority Date: 10/22/2008
• Status: Active Grant

• Current Assignee: Micronic Laser Systems AB (Mycronic AB)
• Original Assignee: Micronic Laser Systems AB (Mycronic AB)
• Inventors: Svensson, Anders, Ekberg, Mats, Wahlsten, Mikael, Sandström, Torbjörn
• Primary Examiner(s): Young; Christopher G
• Application Number:
  US12/604,312
• Publication Number:
  US 20100099051A1
• Time in Patent Office: 537 Days
• Field of Search: 430/30, 430/292, 430/311, 430/945
• US Class Current: 430/30
• CPC Class Codes: G03F 7/2022 Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure
• CPC Class Codes: G03F 7/70383 Direct write, i.e. pattern is written directly without the use of a mask by one or multiple beams maskless lithography using a programmable mask G03F7/70291
• CPC Class Codes: G03F 7/70416 2.5D lithography
• CPC Class Codes: Y10S 430/146 Laser beam

Abstract

The field of this disclosure is making three-dimensional topographic structures by means of graduated exposure in a photosensitive material, such as a photoresist, photosensitive polymide, or similar. Such patterns may be written either to be used directly as optical, mechanical, fluidic, etc. components, e.g. diffusors, non-reflecting surfaces, Fresnel lenses and Fresnel prisms, computer-generated holograms, lenslet arrays, etc, or to be used as masters for the fabrication of such components by replication. Replication can be done by molding, pressing, embossing, electroplating, etching, as known in the art. This disclosure includes descriptions of using passive absorbing components in thin resist, using high gamma thick resists with high resolution pattern generators, using multiple focal planes including at least one focal plane in the bottom half of the resist, and iterative simulation of patterning and adjustment of an exposure map.

Claims

1. A method of forming a three-dimensional latent image with good depth and shape control in a thick resist layer applied over a workpiece surface, the method including:

using in the thick resist layer a positive resist;

selecting multiple focal planes at which to focus exposing energy, wherein at least one of the focal planes is in a lower half of the thick resist layer, the lower half being the half that is further from a surface to which exposing energy is applied;

converting a relief map that represents a three-dimensional surface into point-by-point and layer-by-layer exposure doses calculated to exceed an exposure threshold of the positive resist at a plurality of controlled depths within the resist layer, taking into account a numerical aperture value to be used during patterning, producing an exposure map; and

patterning the resist layer using the multiple focal planes to form a three-dimensional latent image using a pattern generator that varies effective exposure doses on a point-by-point basis using the exposure map.

2. The method of claim 1, wherein the selecting the focal plane in the lower half emphasizes accurate patterning of vertical or near vertical parts of features in the relief map.

3. The method of claim 1, wherein the selecting multiple focal planes further includes:

identifying two or more vertical corners in features in the relief map that are at different vertical heights within the relief map;

selecting two or more focal planes corresponding to the two or more corners and positioning them to enhance the three-dimensional latent image of the vertical corners.

4. The method of claims 1, wherein the selecting the focal plane in the lower half emphasizes accurate patterning of features in the relief map that have relatively high spatial frequencies, as compared to other features in the relief map.

5. The method of claim 1, wherein the pattern generator is a high dynamic range pattern generator that is calibrated to produce at least 1000 dose steps between minimum and maximum exposure doses.

6. The method of claim 1, further including using pixels of different sizes in the multiple focal planes.

7. The method of claim 1, wherein the pattern generator supplies, in a single writing pass, multiple beams focused in the different focal planes.

8. The method of claim 1, further including focusing the pattern generator in the multiple writing planes in multiple writing passes.

9. The method of claim 1, wherein the converting further includes allocating exposure doses among layers and storing the allocated exposure doses layer-by-layer in the exposure map.

10. The method of claim 1, further including applying linear interpolation wherein each layer is treated as having been exposed with an average focus.

11. The method of claim 1, further including representing exposure at each of the focal planes as a plurality of 2D convolutions at depths selected from the relief map and applying the 2D convolutions in the simulating.

12. The method of claim 1, further including convolution by discrete simulation of writing to the multiple focal planes.

13. The method of claim 1, further including representing portions of the layer of resist as volume pixels, so-called voxels.

14. The method of claim 3, further including automatically selecting a number of focal planes based on detection of vertical corners in the relief map.

15. The method of claim 1, further including automatically selecting positions of one or more focal planes based on data in the relief map.

16. The method of claim 3, further including automatically selecting positions of two or more focal planes based on data in the relief map.

17. The method of claim 1, wherein the pattern generator is a laser pattern generator.