Thin film transistor substrate having transparent conductive metal and method of manufacturing the same
First Claim
1. A method of manufacturing a thin film transistor substrate, comprising:
- forming on a surface of a substrate a first conductive pattern group including a gate line, a gate electrode, and a gate pad electrode;
forming a gate insulating layer on the surface of the substrate on which the first conductive pattern group is formed;
forming on the gate insulating layer an oxide semiconductor pattern overlapping the gate electrode;
sequentially forming a first conductive layer and a second conductive layer on the surface of the substrate on which the oxide semiconductor pattern is formed, the first conductive layer formed of a transparent conductive material, and the second conductive layer formed of a metal material; and
patterning the first and second conductive layers to form a second conductive pattern group including a data line, a source electrode, a drain electrode, and a data pad and to form a pixel electrode, the pixel electrode integrally formed with the first conductive layer of the drain electrode.
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Accused Products
Abstract
A thin film transistor substrate and a method of manufacturing the same are disclosed. The method of manufacturing a thin film transistor substrate includes forming a first conductive pattern group including a gate line, a gate electrode, and a lower gate pad electrode on a substrate, forming a gate insulating layer on the substrate on which the first conductive pattern group is formed, forming an oxide semiconductor pattern overlapping the gate electrode on the gate insulating layer, and forming first and second conductive layers on the substrate on which the oxide semiconductor pattern is formed and patterning the first and second conductive layers to form a second conductive pattern group including a data line, a source electrode, a drain electrode, and a data pad.
49 Citations
17 Claims
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1. A method of manufacturing a thin film transistor substrate, comprising:
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forming on a surface of a substrate a first conductive pattern group including a gate line, a gate electrode, and a gate pad electrode; forming a gate insulating layer on the surface of the substrate on which the first conductive pattern group is formed; forming on the gate insulating layer an oxide semiconductor pattern overlapping the gate electrode; sequentially forming a first conductive layer and a second conductive layer on the surface of the substrate on which the oxide semiconductor pattern is formed, the first conductive layer formed of a transparent conductive material, and the second conductive layer formed of a metal material; and patterning the first and second conductive layers to form a second conductive pattern group including a data line, a source electrode, a drain electrode, and a data pad and to form a pixel electrode, the pixel electrode integrally formed with the first conductive layer of the drain electrode. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. A thin film transistor substrate comprising:
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a substrate; a thin film transistor formed on the substrate, the thin film transistor comprising; a first conductive pattern group formed on the substrate, the first conductive pattern group comprising a gate line and a gate electrode; a gate insulating layer formed on the substrate to cover the first conductive pattern group; an oxide semiconductor layer overlapping the gate electrode on the gate insulating layer; and a second conductive pattern group comprising a data line, a source electrode, and a drain electrode, each of the data line, the source electrode and the drain electrode comprising a first conductive layer and a second conductive layer on the oxide semiconductor layer and the gate insulating layer, the first conductive layer formed of a transparent conductive material, and the second conductive layer formed of a metal material; and a pixel electrode integrally formed with the first conductive layer of the drain electrode. - View Dependent Claims (11, 12, 13, 14, 15, 16, 17)
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Specification