Method of reducing defects in PECVD TEOS films

• US 7,923,376 B1
• Filed: 03/30/2006
• Issued: 04/12/2011
• Est. Priority Date: 03/30/2006
• Status: Active Grant

• Current Assignee: Novellus Systems Incorporated (Lam Research Corporation)
• Original Assignee: Novellus Systems Incorporated (Lam Research Corporation)
• Inventors: Dhas, N. Arul, Henri, Jon
• Primary Examiner(s): Kebede; Brook
• Application Number:
  US11/396,303
• Time in Patent Office: 1,839 Days
• Field of Search: 438/758, 438/770, 438/778, 438/787
• US Class Current: 438/758
• CPC Class Codes: C23C 16/401 containing silicon
• CPC Class Codes: H01L 21/02164 the material being a silicon oxide, e.g. SiO2
• CPC Class Codes: H01L 21/02274 in the presence of a plasma [PECVD]
• CPC Class Codes: H01L 21/31608 Deposition of SiO2 H01L21/31625, H01L21/31629 and H01L21/31633 take precedence

Abstract

The present invention provides high deposition rate PECVD methods for depositing TEOS films. The methods significantly reduce the number of particles in the TEOS films, thereby eliminating or minimizing defects. According to various embodiments, the methods involve adding a relatively small amount of helium gas to the process gas. The addition of helium significantly reduces the number of defects in the film, particularly for high deposition rate processes.

Claims

1. A high deposition rate method of forming a low-defect dielectric material on a substrate comprising:

providing a semiconductor device substrate in a deposition chamber;

exposing the substrate to a process gas comprising TEOS, an oxidant and helium, wherein the helium flow rate is between about 2000 sccm and 4000 sccm;

depositing on the substrate a dielectric film by a plasma enhanced chemical vapor deposition (PECVD) process, wherein the deposition rate is at least about 7000 angstroms/min.

2. The method of claim 1 wherein the deposition rate is at least about 9000 angstroms/min.

3. The method of claim 1 wherein the flow rate of the TEOS prior to vaporization is at least about 13 ml/min.

4. The method of claim 1 wherein the flow rate of the TEOS prior to vaporization is at least about 14 ml/min.

5. The method of claim 1 wherein the helium flow rate is about 2000 sccm.

6. The method of claim 1 wherein the oxidant is oxygen.

7. The method of claim 6 wherein the oxygen flow rate is between about 8000 and 12000 sccm.

8. The method of claim 1 wherein the resulting film has a thickness between about 1000 Angstroms to 30000 Angstroms.

9. The method of claim 1 wherein the resulting film has fewer than about 25 defects larger than 0.1 μ

m per 1000 Angstroms.

10. A high deposition rate method of forming a low-defect tensile TEOS oxide film on a substrate comprising:

providing a semiconductor device substrate in a deposition chamber;

exposing the substrate to a process gas comprising to a process gas comprising TEOS, oxygen and helium;

wherein the TEOS flow rate is between about 15 to 20 ml/min prior to vaporization, the helium flow rate is between about 2000-4000 sccm, and the oxygen flow rate is between about 8000-12000 sccm; and

depositing on the substrate a dielectric film by a plasma enhanced chemical vapor deposition (PECVD) process.

11. The method of claim 10 wherein the helium flow rate is about 2000 sccm.

12. The method of claim 10 wherein the TEOS flow rate is about 14 ml/min and the oxygen flow rate is about 10000 sccm.

13. The method of claim 10 wherein the resulting film has a tensile stress of about 0 to 100 Mpa.

14. A high deposition rate method of forming a low-defect compressive TEOS oxide film on a substrate comprising:

providing a semiconductor device substrate in a deposition chamber;

exposing the substrate to a process gas comprising to a process gas comprising TEOS, oxygen and helium;

wherein the TEOS flow rate is between about 10-15 ml/min prior to vaporization, the helium flow rate is between about 2000-4000 sccm and the oxygen flow rate is between about 8000-12000 sccm and depositing on the substrate a dielectric film by a plasma enhanced chemical vapor deposition (PECVD) process.

15. The method of claim 14 wherein the helium flow rate is about 2000 sccm.

16. The method of claim 14 wherein the TEOS flow rate is about 19 ml/min and the oxygen flow rate is about 8000 sccm.

17. The method of claim 14 wherein the resulting film has a compressive stress of between 150-400 Mpa.

18. A high deposition rate method of forming a low-defect compressive TEOS oxide film on a substrate comprising:

providing a semiconductor device substrate in a deposition chamber;

exposing the substrate to a process gas comprising to a process gas comprising TEOS, oxygen and helium;

wherein the TEOS flow rate is between about 10-20 ml/min prior to vaporization, the helium flow rate is between about 1000-4000 sccm and the oxygen flow rate is between about 8000-12000 sccm and

depositing on the substrate a dielectric film by a plasma enhanced chemical vapor deposition (PECVD) process.

19. A high deposition rate method of forming a low-defect dielectric material on a substrate comprising:

providing a semiconductor device substrate in a deposition chamber;

exposing the substrate to a process gas comprising TEOS, an oxidant and helium; and

depositing on the substrate a dielectric film by a plasma enhanced chemical vapor deposition (PECVD) process, wherein the deposition rate is at least about 7000 angstroms/min and wherein the resulting film has fewer than about 100 defects larger than 0.1 μ

m per 1000 Angstroms.