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Methods for producing low stress porous and CDO low-K dielectric materials using precursors with organic functional groups

  • US 7,923,385 B2
  • Filed: 06/05/2009
  • Issued: 04/12/2011
  • Est. Priority Date: 03/31/2003
  • Status: Expired due to Fees
First Claim
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1. A method of preparing a low-k dielectric on an integrated circuit substrate, the method comprising:

  • forming a silicon oxide based dielectric film on the substrate, the film formed by contacting the substrate with ethynyltrimethylsilane and a carrier gas comprising CO2 in a PECVD reactor processing chamber operated at a temperature of between about 300 and 425°

    C., a pressure of between about 2 and 7 Torr and a HF RF power of at least about 125 W.

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